Title:
MATERIAL FOR CHEMICAL VAPOR DEPOSITION, FILM PRODUCTION METHOD, AND FILM
Document Type and Number:
WIPO Patent Application WO/2023/248755
Kind Code:
A1
Abstract:
The present invention provides a material for chemical vapor deposition, a film production method, and a film which are novel. Provided is a material for chemical vapor deposition represented by formula (1). (In the formula, E is an oxygen atom, a sulfur atom, a selenium atom, or a tellurium atom. R1, R2, and R3, are each independently a hydrogen atom or a linear, branched, or cyclic C1-7 organic group, and at least one of R1, R2, and R3 includes a fluorine atom. A case where R1, R2, and R3 are all a hydrogen atom is excluded.)
Inventors:
KAMIMURA SUNAO (JP)
GREER JAMIE (JP)
DUSSARRAT CHRISTIAN (JP)
GREER JAMIE (JP)
DUSSARRAT CHRISTIAN (JP)
Application Number:
PCT/JP2023/020483
Publication Date:
December 28, 2023
Filing Date:
June 01, 2023
Export Citation:
Assignee:
AIR LIQUIDE (FR)
AIR LIQUIDE JAPAN G K (JP)
AIR LIQUIDE JAPAN G K (JP)
International Classes:
C23C16/18; C07C31/38; C07F1/02; C23C16/455
Foreign References:
| JPH05289306A | 1993-11-05 | |||
| US20210388010A1 | 2021-12-16 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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