Title:
MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATES, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATES, METHOD FOR PRODUCING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATES, SOLAR CELL ELEMENT, AND METHOD FOR MANUFACTURING SOLAR CELL ELEMENT
Document Type and Number:
WIPO Patent Application WO/2012/161135
Kind Code:
A1
Abstract:
The present invention provides a material for forming a passivation film for semiconductor substrates, which contains a polymer compound that has an anionic group or a cationic group.
Inventors:
ORITA AKIHIRO (JP)
YOSHIDA MASATO (JP)
NOJIRI TAKESHI (JP)
MACHII YOICHI (JP)
IWAMURO MITSUNORI (JP)
ADACHI SHUICHIRO (JP)
SATO TETSUYA (JP)
TANAKA TORU (JP)
YOSHIDA MASATO (JP)
NOJIRI TAKESHI (JP)
MACHII YOICHI (JP)
IWAMURO MITSUNORI (JP)
ADACHI SHUICHIRO (JP)
SATO TETSUYA (JP)
TANAKA TORU (JP)
Application Number:
PCT/JP2012/062856
Publication Date:
November 29, 2012
Filing Date:
May 18, 2012
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD (JP)
ORITA AKIHIRO (JP)
YOSHIDA MASATO (JP)
NOJIRI TAKESHI (JP)
MACHII YOICHI (JP)
IWAMURO MITSUNORI (JP)
ADACHI SHUICHIRO (JP)
SATO TETSUYA (JP)
TANAKA TORU (JP)
ORITA AKIHIRO (JP)
YOSHIDA MASATO (JP)
NOJIRI TAKESHI (JP)
MACHII YOICHI (JP)
IWAMURO MITSUNORI (JP)
ADACHI SHUICHIRO (JP)
SATO TETSUYA (JP)
TANAKA TORU (JP)
International Classes:
H01L21/312; C08K3/00; C08L25/18; C08L27/12; C08L71/10; C08L101/02; H01L31/04
Foreign References:
| JP2004190008A | 2004-07-08 | |||
| JPH06232438A | 1994-08-19 | |||
| JP2000007783A | 2000-01-11 | |||
| JP2009270117A | 2009-11-19 |
Attorney, Agent or Firm:
HIZATATE, Shoji et al. (JP)
膝舘 Yoshiharu (JP)
膝舘 Yoshiharu (JP)
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