Title:
MBE GROWTH OF A SEMICONDUCTOR LAYER STRUCTURE
Document Type and Number:
WIPO Patent Application WO2004019392
Kind Code:
A3
Abstract:
A method of MBE growth of a semiconductor layer structure comprises growing a first (Al,Ga)N layer (step 13) over a substrate at the first substrate temperature (T1) using ammonia as the nitrogen precursor. The substrate is then cooled (step 14) to a second substrate temperature (T2) which is lower than the first substrate temperature. An (In,Ga)N quantum well structure is then grown (step 15) over the first (Al,Ga)N layer by MBE using ammonia as the nitrogen precursor. The supply of ammonia to the substrate is maintained continuously during the first growth step, the cooling step, and the second growth step. After completion of the growth of the (In,Ga)N quantum well structure, the substrate may be heated to a third temperature (T3) which is greater than the second substrate temperature (T2). A second (Al,Ga)N layer is then grown over the (In,Ga)N quantum well structure (step 17).
Inventors:
BOUSQUET VALERIE (GB)
HOOPER STEWART EDWARD (GB)
BARNES JENNIFER MARY (GB)
HEFFERNAN JONATHAN (GB)
HOOPER STEWART EDWARD (GB)
BARNES JENNIFER MARY (GB)
HEFFERNAN JONATHAN (GB)
Application Number:
PCT/JP2003/010420
Publication Date:
July 08, 2004
Filing Date:
August 18, 2003
Export Citation:
Assignee:
SHARP KK (JP)
BOUSQUET VALERIE (GB)
HOOPER STEWART EDWARD (GB)
BARNES JENNIFER MARY (GB)
HEFFERNAN JONATHAN (GB)
BOUSQUET VALERIE (GB)
HOOPER STEWART EDWARD (GB)
BARNES JENNIFER MARY (GB)
HEFFERNAN JONATHAN (GB)
International Classes:
C30B23/02; H01L21/203; H01L33/00; (IPC1-7): H01L21/203; H01L33/00; C30B23/02
Foreign References:
| EP1061564A2 | 2000-12-20 | |||
| EP1164210A2 | 2001-12-19 | |||
| US5602418A | 1997-02-11 |
Other References:
NAKAMURA S ET AL: "CANDELA-CLASS HIGH-BRIGHTNES INGAN/AIGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 64, no. 13, 28 March 1994 (1994-03-28), pages 1687 - 1689, XP000441256, ISSN: 0003-6951
NAKAMURA S ET AL: "SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING DIODES", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 34, no. 10B, PART 2, 15 October 1995 (1995-10-15), pages L1332 - L1335, XP000702227, ISSN: 0021-4922
NAKAMURA S ET AL: "SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING DIODES", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 34, no. 10B, PART 2, 15 October 1995 (1995-10-15), pages L1332 - L1335, XP000702227, ISSN: 0021-4922
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