Title:
MEASUREMENT METHOD AND MEASUREMENT SYSTEM FOR THERMAL STABILITY INDEX OF MAGNETIC TUNNEL JUNCTION DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND PRODUCTION MANAGEMENT METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2017/164229
Kind Code:
A1
Abstract:
[Problem] To provide a measurement method and measurement system for the thermal stability index of a magnetic tunnel junction device, a semiconductor integrated circuit, and a production management method for a semiconductor integrated circuit that make it possible to measure the thermal stability index of individual devices in a relatively short amount of time and to quickly perform quality control during material development or at a production site. [Solution] While a prescribed current is made to flow to an evaluation MTJ 11a that is maintained at a prescribed temperature, a measuring means 41 measures changes in resistance values of the evaluation MTJ 11a for a prescribed period of time. On the basis of the measured changes in resistance values, an analyzing means 42 finds a time constant for maintaining a low-resistance state and a time constant for maintaining a high-resistance state. The thermal stability index of the evaluation MTJ 11a is found on the basis of the prescribed current that was made to flow to the evaluation MTJ 11a and the found time constants.
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Inventors:
ITO KENCHI (JP)
ENDOH TETSUO (JP)
SATO HIDEO (JP)
SAITOH TAKASHI (JP)
MURAGUCHI MASAKAZU (JP)
OHNO HIDEO (JP)
ENDOH TETSUO (JP)
SATO HIDEO (JP)
SAITOH TAKASHI (JP)
MURAGUCHI MASAKAZU (JP)
OHNO HIDEO (JP)
Application Number:
PCT/JP2017/011408
Publication Date:
September 28, 2017
Filing Date:
March 22, 2017
Export Citation:
Assignee:
UNIV TOHOKU (JP)
International Classes:
H01L21/66; H01L21/8239; H01L27/105; H01L43/12
Foreign References:
| JP2006202999A | 2006-08-03 | |||
| JP2009026944A | 2009-02-05 |
Attorney, Agent or Firm:
SUDA Atsushi et al. (JP)
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