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Patent Searching and Data


Title:
MEASURING METHOD AND MEASURING DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/171350
Kind Code:
A1
Abstract:
Provided is a method for measuring an overlay in a region, in which a circuit pattern with variations in the size of the pattern of an actual device is formed, with high accuracy in the manufacture of a semiconductor device. A measuring method comprises: a first image capturing step for capturing images to be measured regarding one or more coordinates of a circuit pattern; a first selection step for selecting a reference image from the images to be measured; a first region division step for regionally dividing the reference image into units in which the center point or the center axis of a pattern size change is calculated; a difference quantification step for quantifying a difference between the reference image and the image to be measured; and a positional displacement calculation step for calculating the amount of positional displacement between the image to be measured and the reference image on the basis of the difference quantified in the difference quantification step.

Inventors:
MINEKAWA YOHEI (JP)
HARADA MINORU (JP)
TAKAGI YUJI (JP)
MIYAMOTO ATSUSHI (JP)
TANAKA MAKI (JP)
SHISHIDO CHIE (JP)
FUKUNAGA FUMIHIKO (JP)
Application Number:
PCT/JP2014/059916
Publication Date:
October 23, 2014
Filing Date:
April 04, 2014
Export Citation:
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Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
G01B15/00; G01B15/04; G01N23/225; G06T1/00
Foreign References:
US20080215276A12008-09-04
JP2010287762A2010-12-24
JP2012244142A2012-12-10
Other References:
JAEHYOUNG OH ET AL.: "In-die overlay metrology method using defect review SEM images", PROCEEDINGS OF SPIE, vol. 8681, pages 868111-1 - 868111-8
OSAMU INOUE ET AL.: "In-die overlay metrology by using CD -SEM", PROCEEDINGS OF SPIE, vol. 8681, 10 April 2013 (2013-04-10), pages 86812S-1 - 86812S-9
Attorney, Agent or Firm:
INOUE Manabu et al. (JP)
Manabu Inoue (JP)
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