Title:
MEMBER FOR PLASMA PROCESSING APPARATUSES AND PLASMA PROCESSING APPARATUS PROVIDED WITH SAME
Document Type and Number:
WIPO Patent Application WO/2021/065919
Kind Code:
A1
Abstract:
A member for plasma processing apparatuses according to the present disclosure is provided with: a base material; and a film of an oxide, fluoride, oxyfluoride or nitride of a rare earth element, said film being arranged on at least a part of the base material. The film has a σ22/σ11 ratio of 5 or less, where σ11 is the compressive stress generated in the film surface exposed to plasma and σ22 is the compressive stress generated in the film surface in a direction perpendicular to the compressive stress σ11. A plasma processing apparatus according to the present disclosure is provided with this member for plasma processing apparatuses.
More Like This:
Inventors:
ISHIKAWA KAZUHIRO (JP)
HINO TAKASHI (JP)
SAITO SHUICHI (JP)
HINO TAKASHI (JP)
SAITO SHUICHI (JP)
Application Number:
PCT/JP2020/036936
Publication Date:
April 08, 2021
Filing Date:
September 29, 2020
Export Citation:
Assignee:
KYOCERA CORP (JP)
International Classes:
H01L21/3065; C23C14/06; C23C14/08; H01L21/31; C23C8/10
Domestic Patent References:
| WO2019160121A1 | 2019-08-22 |
Foreign References:
| JP2019108588A | 2019-07-04 | |||
| JP2003063860A | 2003-03-05 | |||
| CN103287010A | 2013-09-11 |
Attorney, Agent or Firm:
SAIKYO, Keiichiro (JP)
Download PDF:
Previous Patent: METHOD FOR MANUFACTURING IMAGE DISPLAY DEVICE AND IMAGE DISPLAY DEVICE
Next Patent: VACUUM PLASMA SPRAYING METHOD
Next Patent: VACUUM PLASMA SPRAYING METHOD