Title:
MEMCAPACITOR AND PROGRAMMING METHOD FOR SAME AND CAPACITIVE MEMORY
Document Type and Number:
WIPO Patent Application WO/2020/093199
Kind Code:
A1
Abstract:
An embodiment of the present application provides a memcapacitor and a programming method for same, and a capacitive memory, wherein the memcapacitor comprises: a source electrode, which is a metal material; a first insulating dielectric layer, which is arranged outside the source electrode in the horizontal direction; a programming electrode, which is arranged outside the first insulating dielectric layer in the horizontal direction; a second insulating dielectric layer, which is arranged on upper surfaces of the source electrode and of the first insulating dielectric layer; and a reading electrode, which is arranged on an upper surface of the second insulating dielectric layer, wherein a capacitor is formed among the reading electrode, the second insulating dielectric layer, and the source electrode.
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Inventors:
YAO GUOFENG (CN)
SHEN JIAN (CN)
SHEN JIAN (CN)
Application Number:
PCT/CN2018/113978
Publication Date:
May 14, 2020
Filing Date:
November 05, 2018
Export Citation:
Assignee:
SHENZHEN GOODIX TECH CO LTD (CN)
International Classes:
G11C11/24; H01L27/115
Domestic Patent References:
| WO2010147588A1 | 2010-12-23 |
Foreign References:
| CN1144231C | 2004-03-31 | |||
| US20180268970A1 | 2018-09-20 |
Other References:
See also references of EP 3680906A4
Attorney, Agent or Firm:
LONGSUN LEAD IP LTD. (CN)
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