Title:
MEMORIES WITH CYLINDRICAL READ/WRITE STACKS
Document Type and Number:
WIPO Patent Application WO/2013/192216
Kind Code:
A3
Abstract:
A three-dimensional memory is formed as an array of memory elements across multiple layers positioned at different distances above a semiconductor substrate. Cylindrical stacks of memory elements are formed where a cylindrical opening has read/write material deposited along its wall, and a cylindrical vertical bit line formed along its central axis. Memory elements formed on either side of such a cylinder may include sheet electrodes that extend into the read/write material.
Inventors:
CHIEN HENRY (US)
LEE YAO-SHENG (US)
SAMACHISA GEORGE (US)
ALSMEIER JOHANN (US)
LEE YAO-SHENG (US)
SAMACHISA GEORGE (US)
ALSMEIER JOHANN (US)
Application Number:
PCT/US2013/046379
Publication Date:
March 20, 2014
Filing Date:
June 18, 2013
Export Citation:
Assignee:
SANDISK 3D LLC (US)
International Classes:
H01L45/00; H01L27/24
Domestic Patent References:
| WO2011056281A1 | 2011-05-12 |
Foreign References:
| US7952163B2 | 2011-05-31 | |||
| US20110140068A1 | 2011-06-16 | |||
| US20110309322A1 | 2011-12-22 | |||
| US20120147649A1 | 2012-06-14 | |||
| US20110115049A1 | 2011-05-19 |
Attorney, Agent or Firm:
GALLAGHER, Peter A. et al. (505 Montgomery Street Suite 80, San Francisco California, US)
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