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Patent Searching and Data


Title:
MEMORY ADJUSTMENT METHOD AND SYSTEM, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/042099
Kind Code:
A1
Abstract:
Embodiments of the present application provide a memory adjustment method and system, and a semiconductor device. The memory adjustment method comprises: obtaining a mapping relationship among a temperature of a transistor, an equivalent aspect ratio of a sensitive amplification transistor in a sensitive amplifier and an actual data writing time of a memory; obtaining the current temperature of the transistor; adjusting the equivalent aspect ratio on the basis of the current temperature and the mapping relationship, so that the actual data writing time corresponding to the adjusted equivalent aspect ratio falls within a preset writing time. Since a temperature would affect the actual data writing time of the memory, the embodiments of the present application first obtain a mapping relationship among a temperature of a transistor, an equivalent aspect ratio of a sensitive amplification transistor in a sensitive amplifier and an actual data writing time, obtain the actual data writing time of the memory according to the current temperature of the transistor, and then adjust the actual data writing time of the memory under the current temperature of the transistor by adjusting the equivalent aspect ratio of the sensitive amplification transistor in the sensitive amplifier.

Inventors:
NING SHU-LIANG (CN)
HE JUN (CN)
YING ZHAN (CN)
LIU JIE (CN)
Application Number:
PCT/CN2021/106060
Publication Date:
March 03, 2022
Filing Date:
July 13, 2021
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C11/401; G11C7/04
Foreign References:
CN110875070A2020-03-10
CN104952481A2015-09-30
CN103474093A2013-12-25
CN101004945A2007-07-25
US20090245003A12009-10-01
Other References:
See also references of EP 4089679A4
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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