Title:
MEMORY ARRAY, PREPARATION METHOD FOR MEMORY ARRAY, PHASE CHANGE MEMORY, AND MEMORY CHIP
Document Type and Number:
WIPO Patent Application WO/2023/273542
Kind Code:
A1
Abstract:
The present application is applicable to the technical field of semiconductors, and provides a memory array, a preparation method for the memory array, a phase change memory, and a memory chip. The memory array comprises a substrate material, and a plurality of phase change memory cells arranged on the substrate material; each of the plurality of phase change memory cells comprises a phase change material; in the plurality of phase change memory cells, the heights of the phase change materials of any two adjacent phase change memory cells are different, and the height of the phase change material refers to the distance between the phase change material and the substrate material. By adjusting the heights of the phase change materials in the phase change memory cells, the phase change materials of any two adjacent phase change memory cells are located at different heights, so that the distance between adjacent phase change materials can be increased, thereby significantly reducing the thermal crosstalk between two adjacent phase change materials, and improving the anti-interference capability of the phase change memory cells.
Inventors:
LAN TIAN (CN)
MA PING (CN)
MA PING (CN)
Application Number:
PCT/CN2022/088283
Publication Date:
January 05, 2023
Filing Date:
April 21, 2022
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L45/00
Foreign References:
| US20090065758A1 | 2009-03-12 | |||
| CN112652714A | 2021-04-13 | |||
| US20080237566A1 | 2008-10-02 | |||
| CN112951992A | 2021-06-11 |
Attorney, Agent or Firm:
SHENZHEN ZHONGYI UNION INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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