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Title:
MEMORY CELL AND NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/194827
Kind Code:
A1
Abstract:
Proposed are a memory cell and a non-volatile semiconductor storage device, wherein: by forming nitride side wall layers (32a, 32b) in one side wall spacer (28a) and in the other side wall spacer (28b), respectively, such that a memory gate electrode (MG) and a first selection gate electrode (DG) are separated from each other, and the memory gate electrode (MG) and a second selection gate electrode (SG) are separated from each other, a withstand voltage at the periphery of the memory gate electrode (MG) can be improved compared with conventional cases where the one side wall spacer (28a) and the other side wall spacer (28b) are simply formed of an insulating oxide film; and by bringing the nitride side wall layers (32a, 32b) further from a memory well (MW) than a charge storage layer (EC), charges are not susceptible to being injected into the nitride side wall layers (32a, 32b) at the time of injecting the charges into the charge storage layer (EC) from the memory well (MW), and an operation failure due to having charges stored in areas except the charge storage layer (EC) can be eliminated.

Inventors:
TANIGUCHI Yasuhiro (30-9 Ogawahigashicho 1-chome, Kodaira-sh, Tokyo 31, 〒1870031, JP)
OWADA Fukuo (30-9 Ogawahigashicho 1-chome, Kodaira-sh, Tokyo 31, 〒1870031, JP)
KAWASHIMA Yasuhiko (30-9 Ogawahigashicho 1-chome, Kodaira-sh, Tokyo 31, 〒1870031, JP)
YOSHIDA Shinji (30-9 Ogawahigashicho 1-chome, Kodaira-sh, Tokyo 31, 〒1870031, JP)
OKUYAMA Kosuke (30-9 Ogawahigashicho 1-chome, Kodaira-sh, Tokyo 31, 〒1870031, JP)
Application Number:
JP2016/065758
Publication Date:
December 08, 2016
Filing Date:
May 27, 2016
Export Citation:
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Assignee:
FLOADIA CORPORATION (30-9, Ogawahigashicho 1-chome Kodaira-sh, Tokyo 31, 〒1870031, JP)
International Classes:
H01L21/8247; H01L21/336; H01L27/115; H01L29/788; H01L29/792
Foreign References:
JP2010278314A2010-12-09
JP2005142354A2005-06-02
JP2002164449A2002-06-07
JP2011129816A2011-06-30
US20140175533A12014-06-26
Other References:
See also references of EP 3300103A4
Attorney, Agent or Firm:
YOSHIDA Tadanori (304 La Tour Shinjuku, 15-1 Nishi-shinjuku 6-chome, Shinjuku-k, Tokyo 23, 〒1600023, JP)
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