MEMORY CELL, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Title:

MEMORY CELL, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Document Type and Number:

WIPO Patent Application WO/2017/014254

Kind Code:

A1

Abstract:

A memory cell (1) according to the present invention is provided with: a memory gate structure (2) formed by laminating, in the stated order, a lower memory gate insulation film (10), a charge accumulation layer (EC), an upper memory gate insulation film (11), and a metal memory gate electrode (MG); a first selection gate structure (3) having a metal first selection gate electrode (DG) along a side wall spacer (8a) provided to a side wall of the memory gate structure (2); and a second selection gate structure (4) having a metal second selection gate electrode (SG) along another side wall spacer (8b) provided to a side wall of the memory gate structure (2). It is thereby possible to form the metal memory gate electrode (MG), the metal first selection gate electrode (DG), and the metal second selection gate electrode (SG) from the same metal material as a metal logic gate electrode (LG1), making it possible to form the metal memory gate electrode (MG), the metal first selection gate electrode (DG), and the metal second selection gate electrode (SG) in a series of manufacturing steps for forming the metal logic gate electrode (LG1) comprising a metal material on a semiconductor substrate.

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Inventors:

YOSHIDA SHOJI (JP)
OWADA FUKUO (JP)
OKADA DAISUKE (JP)
KAWASHIMA YASUHIKO (JP)
YOSHIDA SHINJI (JP)
YANAGISAWA KAZUMASA (JP)
TANIGUCHI YASUHIRO (JP)

Application Number:

PCT/JP2016/071351

Publication Date:

January 26, 2017

Filing Date:

July 21, 2016

Export Citation:

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Assignee:

FLOADIA CORP (JP)

International Classes:

H01L21/336; H01L27/10; H01L27/115; H01L29/788; H01L29/792

Foreign References:

JP2010278314A	2010-12-09
JP2012248652A	2012-12-13
JP2014143339A	2014-08-07
JP2015103698A	2015-06-04
JP2011029631A	2011-02-10
US20140175533A1	2014-06-26

Other References: