Title:
MEMORY CELL AND STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/143383
Kind Code:
A1
Abstract:
To improve performance of a memory cell that stores therein values corresponding to the current directions.
This memory cell is provided with an N-type transistor, a P-type transistor, and a storage element. The N-type transistor supplies a current in the direction from one to the other of the source and the drain or in the direction from the other to the one of the source and the drain. The P-type transistor supplies a current from the source to the drain. The storage element stores therein logical values corresponding to the directions of the currents supplied from both the drains of the N-type transistor and the P-type transistor.
Inventors:
OKA MIKIO (JP)
KANDA YASUO (JP)
HIGO YUTAKA (JP)
KANDA YASUO (JP)
HIGO YUTAKA (JP)
Application Number:
PCT/JP2016/051016
Publication Date:
September 15, 2016
Filing Date:
January 14, 2016
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
G11C11/15; G11C13/00; H01L21/8246; H01L27/105; H01L29/82; H01L43/08
Foreign References:
| JP2006155719A | 2006-06-15 | |||
| JP2013030241A | 2013-02-07 | |||
| US20140112066A1 | 2014-04-24 |
Attorney, Agent or Firm:
MARUSHIMA, TOSHIKAZU (JP)
Toshikazu Marushima (JP)
Toshikazu Marushima (JP)
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