MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER

WIPO Patent Application WO/2011/159584

A4

A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has a resistance-switching layer, a conductive intermediate layer, and first and second electrodes at either end of the RSME. A breakdown layer is electrically between, and in series with, the second electrode and the intermediate layer. The breakdown layer maintains a resistance of at least about 1-10 ΜΩ while in a conductive state. In a set or reset operation of the memory cell, an ionic current flows in the resistance- switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.

WO/2008/027135	SELF-ALIGNED, PLANAR PHASE CHANGE MEMORY ELEMENTS AND DEVICES, SYSTEMS EMPLOYING THE SAME AND METHODS OF FORMING THE SAME
JP2003504857	INDUSTRIAL APPLICABILITY: An apparatus using a nanoscopic wire, an array, and a method for manufacturing the same.
WO/2012/082654	ARCHITECTURE FOR THREE DIMESIONAL NON-VOLATILE STORAGE WITH VERTICAL BIT LINES

KREUPL FRANZ (US)
FU CHU-CHEN (US)
NIAN YIBO (US)

PCT/US2011/040107

March 22, 2012

June 10, 2011

Click for automatic bibliography generation  

SANDISK 3D LLC (US)
KREUPL FRANZ (US)
FU CHU-CHEN (US)
NIAN YIBO (US)

H01L27/24; H01L45/00

MAGEN, Burt (LLP575 Market Street, Suite 250, San Francisco CA, US)

View/Download PDF      PDF Help

Previous Patent: COMPOSITION OF MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS

Next Patent: CONSTRUCTION MATERIAL MADE OF ALGAE, METHOD FOR CULTIVATING ALGAE, AND ALGAE CULTIVATION PLANT