Title:
MEMORY DEVICE AND FORMING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2019/200582
Kind Code:
A1
Abstract:
Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.
Inventors:
PU YUEQIANG (CN)
DONG JINWEN (CN)
CHEN JUN (CN)
LU ZHENYU (CN)
TAO QIAN (CN)
HU YUSHI (CN)
TANG ZHAOHUI (CN)
XIAO LIHONG (CN)
ZHOU YUTING (CN)
LI SIZHE (CN)
LI ZHAOSONG (CN)
DONG JINWEN (CN)
CHEN JUN (CN)
LU ZHENYU (CN)
TAO QIAN (CN)
HU YUSHI (CN)
TANG ZHAOHUI (CN)
XIAO LIHONG (CN)
ZHOU YUTING (CN)
LI SIZHE (CN)
LI ZHAOSONG (CN)
Application Number:
PCT/CN2018/083718
Publication Date:
October 24, 2019
Filing Date:
April 19, 2018
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/115
Foreign References:
| EP3193354A1 | 2017-07-19 | |||
| US20160104623A1 | 2016-04-14 | |||
| CN105097811A | 2015-11-25 | |||
| CN107305891A | 2017-10-31 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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