Title:
MEMORY DEVICE, MEMORY SYSTEM, AND PROGRAM OPERATION METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/098145
Kind Code:
A1
Abstract:
A memory device includes a memory cell array and peripheral circuits. The memory cell array may include one or more first memory cells configured to store first type data, and one or more second memory cells configured to store second type data. The peripheral circuits may be coupled to the memory cell array and configured to perform a first program operation on the one or more first memory cells, perform the first program operation on the one or more second memory cells, and perform a second program operation on the one or more first memory cells. A first storage time corresponding to the first type data is longer than a second storage time corresponding to the second type data.
Inventors:
ZHAO XIANGNAN (CN)
LIU HONGTAO (CN)
LIU HONGTAO (CN)
Application Number:
PCT/CN2022/112987
Publication Date:
June 08, 2023
Filing Date:
August 17, 2022
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/34
Foreign References:
| CN114400035A | 2022-04-26 | |||
| CN104332178A | 2015-02-04 | |||
| CN110870015A | 2020-03-06 | |||
| CN102150216A | 2011-08-10 | |||
| CN110036446A | 2019-07-19 | |||
| US20160078945A1 | 2016-03-17 | |||
| US20170076802A1 | 2017-03-16 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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