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Title:
MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/148391
Kind Code:
A1
Abstract:
Disclosed is a memory device in which a lower electrode, a seed layer, a magnetic tunnel junction, a capping layer, a composite interchange diamagnetic layer, and an upper electrode are stacked on a substrate, wherein the seed layer has at least a double layer structure, and at least one layer thereof is made of polycrystalline conductive material having a bcc structure.

Inventors:
PARK JEA GUN (KR)
LI JUNLI (KR)
Application Number:
PCT/KR2016/001124
Publication Date:
September 22, 2016
Filing Date:
February 02, 2016
Export Citation:
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Assignee:
IUCF-HYU (KR)
International Classes:
H01L43/02; H01L43/08; H01L43/10
Foreign References:
JP2011003869A2011-01-06
KR20150015601A2015-02-11
KR20130071406A2013-06-28
US20040129928A12004-07-08
KR20120129265A2012-11-28
Attorney, Agent or Firm:
NAM, SEUNG-HEE (KR)
남승희 (KR)
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