Title:
MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/143052
Kind Code:
A1
Abstract:
A memory device is disclosed. The memory device according to an embodiment of the present invention comprises a lower electrode, a seed layer, a lower synthetic exchange diamagnetic layer, a magnetic tunnel junction, an upper synthetic exchange diamagnetic layer, and an upper electrode which are laminated in that order on a substrate, wherein the magnetic tunnel junction comprises a lower pinned layer, a lower tunnel barrier layer, a lower free layer, a separation layer, an upper free layer, an upper tunnel barrier layer, and an upper pinned layer which are sequentially laminated.
Inventors:
PARK JEA GUN (KR)
CHOI JIN YOUNG (KR)
JUN HAN SOL (KR)
LEE DONG GI (KR)
KEI KONDO (KR)
BAEK JONG UNG (KR)
CHOI JIN YOUNG (KR)
JUN HAN SOL (KR)
LEE DONG GI (KR)
KEI KONDO (KR)
BAEK JONG UNG (KR)
Application Number:
PCT/KR2019/000133
Publication Date:
July 25, 2019
Filing Date:
January 04, 2019
Export Citation:
Assignee:
UNIV HANYANG IND UNIV COOP FOUND (KR)
International Classes:
H01L43/08; H01L43/02
Domestic Patent References:
| WO2016209257A1 | 2016-12-29 |
Foreign References:
| US20150171316A1 | 2015-06-18 | |||
| US6593608B1 | 2003-07-15 | |||
| US20140070341A1 | 2014-03-13 | |||
| US20060017081A1 | 2006-01-26 | |||
| US20120120720A1 | 2012-05-17 |
Attorney, Agent or Firm:
KIM, Youn Gwon (KR)
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