Title:
MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/105877
Kind Code:
A1
Abstract:
A memory device is disclosed. A memory device according to one embodiment of the present invention comprises a lower electrode, a seed layer, a composite interchange diamagnetic layer, a magnetic tunnel junction and an upper electrode, which are stacked on a substrate, wherein the magnetic tunnel junction includes a fixed layer, a tunnel barrier layer and a free layer, and the free layer includes a first free layer, a spacer layer, a coupling layer, a buffer layer and a second free layer, which are sequentially stacked.
Inventors:
PARK JEA GUN (KR)
BAEK JONG UNG (KR)
BAEK JONG UNG (KR)
Application Number:
PCT/KR2019/014086
Publication Date:
May 28, 2020
Filing Date:
October 24, 2019
Export Citation:
Assignee:
UNIV HANYANG IND UNIV COOP FOUND (KR)
International Classes:
H01L43/08; H01L43/02; H01L43/10
Foreign References:
| KR20160113504A | 2016-09-29 | |||
| KR20070121504A | 2007-12-27 | |||
| JP2006261637A | 2006-09-28 |
Other References:
LEE, DU-YEONG ET AL.: "Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling- Junction", SCIENTIFIC REPORTS, 8 December 2016 (2016-12-08), pages 1 - 9, XP055710035
LIU, SHUAI ET AL.: "Co/Pt multilayer-based pseudo spin valves with perpendicular magnetic anisotropy", RARE METALS, 7 November 2014 (2014-11-07), pages 646 - 651, XP035381951, DOI: 10.1007/s12598-014-0404-2
LIU, SHUAI ET AL.: "Co/Pt multilayer-based pseudo spin valves with perpendicular magnetic anisotropy", RARE METALS, 7 November 2014 (2014-11-07), pages 646 - 651, XP035381951, DOI: 10.1007/s12598-014-0404-2
Attorney, Agent or Firm:
KIM, Youn Gwon (KR)
Download PDF: