Title:
MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/048928
Kind Code:
A1
Abstract:
The present invention limits an increase in the size of a memory array. A memory device according to an embodiment comprises: a first conductor and a charge storage film that extend in a first direction that crosses the surface of a substrate; a first semiconductor of a first conductive type; a second semiconductor and a third semiconductor each of a second conductive type; and a first laminate that includes a second conductor, a first insulator, and a third conductor that each extend in a second direction within a first plane parallel to the surface of the substrate and that are laminated in said order along the first direction. The first conductor, the charge storage film, the first semiconductor, and the first laminate are aligned in said order above the substrate in a third direction that crosses the second direction within the first plane. The second semiconductor makes contact with the first semiconductor and the second conductor between the second conductor or the first insulator and the charge storage film. The third semiconductor makes contact with the first semiconductor and the third conductor between the third conductor or the first insulator and the charge storage film.
Inventors:
OKAJIMA MUTSUMI (JP)
Application Number:
PCT/JP2019/035567
Publication Date:
March 18, 2021
Filing Date:
September 10, 2019
Export Citation:
Assignee:
KIOXIA CORP (JP)
International Classes:
H01L27/11578; H01L27/11551
Domestic Patent References:
| WO2018039654A1 | 2018-03-01 |
Foreign References:
| JP2010251572A | 2010-11-04 | |||
| JP2010130016A | 2010-06-10 | |||
| JP2008192804A | 2008-08-21 |
Attorney, Agent or Firm:
KURATA, Masatoshi et al. (JP)
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