Title:
MEMORY ELEMENT AND MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/087784
Kind Code:
A1
Abstract:
Provided are a memory element and a memory device which can attain an improvement in the retention of an intermediate resistance in writing with a low current. Also provided are a memory element and a memory device which can attain a reduction in random telegraph noise. One embodiment according to the present technique is a memory element which comprises a first electrode, a memory layer and a second electrode in this order, said memory layer being provided with: an ion source layer that contains at least one chalcogen element selected from among tellurium (Te), sulfur (S) and selenium (Se) and at least one transition metal element selected from among Group 4, 5 and 6 transition metal elements of the periodic table; and a variable resistive layer that contains both boron (B) and oxygen (O). Another embodiment according to the present technique is a memory element which comprises a first electrode, a memory layer and a second electrode in this order, said memory layer being provided with: an ion source layer described above; and a variable resistive layer that contains both at least one transition metal element selected from among Group 4, 5 and 6 transition metal elements of the periodic table and oxygen (O).
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Inventors:
OHBA KAZUHIRO (JP)
SEI HIROAKI (JP)
SEI HIROAKI (JP)
Application Number:
PCT/JP2013/079983
Publication Date:
June 12, 2014
Filing Date:
November 06, 2013
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L27/105; H01L45/00; H01L49/00
Foreign References:
| JP2012182172A | 2012-09-20 | |||
| JP2009218260A | 2009-09-24 | |||
| JP2012146368A | 2012-08-02 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
Patent business corporation wings international patent firm (JP)
Patent business corporation wings international patent firm (JP)
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