Title:
MEMORY ELEMENT AND METHOD FOR DRIVING MEMORY ELEMENT
Document Type and Number:
WIPO Patent Application WO/2018/179193
Kind Code:
A1
Abstract:
Provided are: a memory element that is capable of efficiently storing, as a selection value, a continuous quantity or multi-valued discrete quantity; and a method for driving a memory element. A memory element (10) has a structure in which a recording layer (11), a non-magnetic layer (12), and an electrode (13a) are sequentially stacked. While a magnetic field parallel to an axis of easy magnetization of the recording layer (11) is being applied to the recording layer (11), an electrical field intensity corresponding to a selection value to be written is applied and then the electrical field intensity is reduced to zero. The remnant magnetization in the recording layer (11) represents the value corresponding to the electrical field intensity that corresponds to the selection value to be written. Then, a read-out current (Ir) is applied to the recording layer (11) so as to read out the selection value stored in the memory element (10) from a Hall resistance.
Inventors:
KANAI SHUN (JP)
MATSUKURA FUMIHIRO (JP)
OHNO HIDEO (JP)
MATSUKURA FUMIHIRO (JP)
OHNO HIDEO (JP)
Application Number:
PCT/JP2017/013119
Publication Date:
October 04, 2018
Filing Date:
March 29, 2017
Export Citation:
Assignee:
UNIV TOHOKU (JP)
International Classes:
G11C11/56; G11C11/16; G11C11/18; H01L21/8239; H01L27/105; H01L43/08
Domestic Patent References:
| WO2009157101A1 | 2009-12-30 | |||
| WO2017018391A1 | 2017-02-02 |
Foreign References:
| JP2015088669A | 2015-05-07 | |||
| JP2004146820A | 2004-05-20 |
Attorney, Agent or Firm:
YOSHIDA Tadanori (JP)
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