Title:
MEMORY ELEMENT
Document Type and Number:
WIPO Patent Application WO/2015/160092
Kind Code:
A2
Abstract:
Disclosed is a memory element having, stacked on a substrate, a lower electrode, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, a synthetic exchange diamagnetic layer and an upper electrode, wherein the lower electrode and the seed layer comprise polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained even at a heat treatment temperature of 400 ºC or higher.
Inventors:
PARK JEA GUN (KR)
LEE DU YEONG (KR)
LEE SEUNG EUN (KR)
JEON MIN SU (KR)
BAEK JONG UNG (KR)
SHIM TAE HUN (KR)
LEE DU YEONG (KR)
LEE SEUNG EUN (KR)
JEON MIN SU (KR)
BAEK JONG UNG (KR)
SHIM TAE HUN (KR)
Application Number:
PCT/KR2015/002606
Publication Date:
October 22, 2015
Filing Date:
March 18, 2015
Export Citation:
Assignee:
IUCF HYU (KR)
International Classes:
H01L43/02; H01L43/12
Attorney, Agent or Firm:
NAM, SEUNG-HEE (KR)
남승희 (KR)
남승희 (KR)
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