Title:
MEMORY FORMING METHOD AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2022/028175
Kind Code:
A1
Abstract:
Disclosed in the present disclosure are a memory forming method and a memory. The forming method comprises: providing a substrate, the substrate at least comprising a wordline structure and an active area, as well as a bottom dielectric layer and a bitline contact layer which are located on the top surface of the substrate, wherein a bitline contact opening is provided in the bottom dielectric layer, the active area in the substrate is exposed by means of the bitline contact opening, and the bitline contact layer covers the bottom dielectric layer and fills the bitline contact opening; etching part of the bitline contact layer to form first bitline contact layers of different heights; forming a conductive layer, wherein the top surface of the conductive layer is located at different heights in the direction perpendicular to the extending direction of the wordline structure; in the extending direction of the wordline structure, enabling the top surface of the conductive layer to be located at different heights; forming a top dielectric layer; and performing etching to form a discrete bitline structure.
Inventors:
ZHANG LINGGUO (CN)
KWON THOMAS JONGWAN (CN)
ZHANG LINTAO (CN)
ZHOU XIANGUI (CN)
LIU XU (CN)
KWON THOMAS JONGWAN (CN)
ZHANG LINTAO (CN)
ZHOU XIANGUI (CN)
LIU XU (CN)
Application Number:
PCT/CN2021/104376
Publication Date:
February 10, 2022
Filing Date:
July 02, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/528; G11C7/18
Foreign References:
| CN110556359A | 2019-12-10 | |||
| KR20090111050A | 2009-10-26 | |||
| CN108172620A | 2018-06-15 | |||
| KR20080092557A | 2008-10-16 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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