Title:
MEMORY AND MEMORY MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/102785
Kind Code:
A1
Abstract:
Embodiments of the present application provide a memory and a memory manufacturing method. The memory comprises a write word line, a write bit line, a read word line, a read bit line, and a storage unit; the storage unit comprises a write transistor and a read transistor that are successively arranged in a first direction; the read transistor comprises a first gate, a first electrode, and a second electrode, and the write transistor comprises a second gate, a third electrode, and a fourth electrode; the second gate is connected to the write word line, the fourth electrode is connected to the write bit line, the second electrode is connected to the read word line, the first electrode is connected to the read bit line, and the third electrode and the first gate are connected to form a storage node; a decoupling capacitor has one end connected to the storage node and the other end connected to a preset potential. According to the memory and the memory manufacturing method provided in the embodiments of the present application, the voltage coupling of the write word line and the read word line to the storage node can be reduced.
Inventors:
YIN SHIHUI (CN)
JING WEILIANG (CN)
HUANG KAILIANG (CN)
FENG JUNXIAO (CN)
WANG ZHENGBO (CN)
LIAO HENG (CN)
JING WEILIANG (CN)
HUANG KAILIANG (CN)
FENG JUNXIAO (CN)
WANG ZHENGBO (CN)
LIAO HENG (CN)
Application Number:
PCT/CN2021/136564
Publication Date:
June 15, 2023
Filing Date:
December 08, 2021
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G11C11/22
Foreign References:
| CN110556377A | 2019-12-10 | |||
| JP2001053164A | 2001-02-23 | |||
| CN111951848A | 2020-11-17 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
Download PDF: