Title:
MEMORY AND MEMORY MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/155717
Kind Code:
A1
Abstract:
The present application discloses a memory and a memory manufacturing method. The retention properties and endurance of the memory can be improved, a read window is increased, and the device consistency of multiple memories in a storage array under the condition that the multiple memories use a two-dimensional material is improved. The memory comprises: a two-dimensional material layer and a first conductor layer; a ferroelectric layer, located between the two-dimensional material layer and the first conductor layer; a dielectric layer, located between the two-dimensional material layer and the ferroelectric layer; and a source and a drain, electrically connected to two ends of the two-dimensional material layer, respectively.
Inventors:
WANG XINRAN (CN)
LUO SHIJIANG (CN)
YU ZHIHAO (CN)
NING HONGKAI (CN)
XIE YUNONG (CN)
TANG WENTAO (CN)
ZHAO JUNFENG (CN)
LUO SHIJIANG (CN)
YU ZHIHAO (CN)
NING HONGKAI (CN)
XIE YUNONG (CN)
TANG WENTAO (CN)
ZHAO JUNFENG (CN)
Application Number:
PCT/CN2023/074977
Publication Date:
August 24, 2023
Filing Date:
February 08, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H10B51/00; H10B51/30
Foreign References:
| CN110943128A | 2020-03-31 | |||
| US20200303417A1 | 2020-09-24 | |||
| CN108417636A | 2018-08-17 | |||
| CN112038406A | 2020-12-04 |
Attorney, Agent or Firm:
LONGSUN LEAD IP LTD. (CN)
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