Title:
MEMORY AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/116046
Kind Code:
A1
Abstract:
A memory and a preparation method therefor. The memory comprises: a bottom circuit layer (1); a bottom electrode (2) provided on the upper surface of the bottom circuit layer (1); an oxide layer (3) provided around the bottom electrode (2); a memory cell layer (4) and a metal hard mask layer (5) which are arranged on the upper surface of the bottom electrode (2) and are stacked from bottom to top; and a top circuit layer (6) provided on the upper surface of the metal hard mask layer (5). In the memory of the present application, the oxide layer is provided around the bottom electrode, that is, the sidewall of the bottom electrode is fully oxidized, so that occurrence of a short circuit caused by anti-sputtering is reduced in the etching process of the memory cell layer, and the performance and yield of the memory are improved; moreover, since the bottom electrode has a large critical dimension, nesting precision control is looser, and the implementation difficulty of a patterning process of the bottom electrode is remarkably reduced; the thickness of the oxide layer is controllable, and can be adjusted according to the dimension of the memory cell layer to be compatible with memory cells of different dimensions.
Inventors:
YU ZHIMENG (CN)
SHEN LIJIE (CN)
YANG DANDAN (CN)
HE SHIKUN (CN)
SHEN LIJIE (CN)
YANG DANDAN (CN)
HE SHIKUN (CN)
Application Number:
PCT/CN2022/116774
Publication Date:
June 29, 2023
Filing Date:
September 02, 2022
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L27/22; H01L43/08; H01L43/12; H01L45/00
Foreign References:
| US20120235109A1 | 2012-09-20 | |||
| TWI708410B | 2020-10-21 | |||
| CN102347442A | 2012-02-08 | |||
| CN103035837A | 2013-04-10 |
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW CO., LTD. (CN)
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