Title:
MEMORY AND PREPARATION METHOD FOR MEMORY
Document Type and Number:
WIPO Patent Application WO/2022/028161
Kind Code:
A1
Abstract:
Provided in the embodiments of the present application are a memory and a method for fabricating the memory. The memory comprises first fin parts and second fin parts located on a substrate; a dielectric layer covering the top parts of the first fin parts and a sidewall surface exposed by an isolation structure; and a work function layer located on the surface of the dielectric layer, wherein in the arrangement direction parallel to the first fin parts and the second fin parts, the work function layer on opposite sidewalls of adjacent first fin parts has a first thickness, the work function layer on the sidewalls of the first fin parts facing the second fin parts has a second thickness, and the first thickness is greater than the second thickness.
Inventors:
LIU CHIH-CHENG (CN)
Application Number:
PCT/CN2021/103700
Publication Date:
February 10, 2022
Filing Date:
June 30, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/105; H01L21/28; H01L21/8239; H01L29/423
Foreign References:
| CN111200019A | 2020-05-26 | |||
| US20110260242A1 | 2011-10-27 | |||
| US20050170593A1 | 2005-08-04 | |||
| CN103165613A | 2013-06-19 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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