Title:
MEMORY AND STORAGE SYSTEM
Document Type and Number:
WIPO Patent Application WO/2024/060367
Kind Code:
A1
Abstract:
The embodiments of the present disclosure provide a memory and a storage system. The memory comprises: a substrate; a control circuit layer, which is located in the substrate, wherein the control circuit layer comprises at least part of a control circuit of the memory; and at least two storage structure layers, which are sequentially stacked on the control circuit layer, wherein each storage structure layer comprises a plurality of storage blocks arranged in an array, each storage block comprises a plurality of parallel word lines extending in a first direction, and the first direction is parallel to the surface of the substrate. There is an opening between adjacent storage blocks in the same storage structure layer; openings located in different storage structure layers are in communication with each other; and each word line in at least one storage structure layer is connected to the control circuit layer through the communicating openings.
Inventors:
TANG YANZHE (CN)
Application Number:
PCT/CN2022/130570
Publication Date:
March 28, 2024
Filing Date:
November 08, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C5/02
Domestic Patent References:
| WO2022016455A1 | 2022-01-27 |
Foreign References:
| CN112038348A | 2020-12-04 | |||
| CN110176265A | 2019-08-27 | |||
| CN113870909A | 2021-12-31 | |||
| US20190333967A1 | 2019-10-31 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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