Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
MEMORY UNIT AND STATIC RANDOM ACCESS MEMORY
Document Type and Number:
WIPO Patent Application WO/2019/041840
Kind Code:
A1
Abstract:
A memory unit and a static random access memory. The memory unit comprises : a latch, the latch providing a first memory bit; and the memory unit further comprises a first MOS tube; the gate electrode of the first MOS tube is connected to the first memory bit, the source electrode of the first MOS tube is connected to a first reading line, and the drain electrode of first MOS tube is connected to a second reading line; in a first state, the first reading line is a reading word line, and the second reading line is a reading bit line; and in a second state, the second reading line is a reading word line, and the first reading line is a reading bit line. The present memory unit and the memory unit of the static random access memory can enable the exchange of the reading word line and the reading bit line.

Inventors:
CHI SIJIE (CN)
JI BINGWU (CN)
ZHAO TANFU (CN)
ZHOU YUNMING (CN)
Application Number:
PCT/CN2018/084100
Publication Date:
March 07, 2019
Filing Date:
April 23, 2018
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G11C11/418
Foreign References:
CN101385088A2009-03-11
CN1178988A1998-04-15
US20080101144A12008-05-01
CN201710785410A2017-09-04
Other References:
See also references of EP 3667669A4
Attorney, Agent or Firm:
E-TONE INTELLECTUAL PROPERTY FIRM (CN)
Download PDF: