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Title:
MEMORY UNIT AND STATIC RANDOM ACCESS MEMORY
Document Type and Number:
WIPO Patent Application WO/2019/041840
Kind Code:
A1
Abstract:
A memory unit and a static random access memory. The memory unit comprises : a latch, the latch providing a first memory bit; and the memory unit further comprises a first MOS tube; the gate electrode of the first MOS tube is connected to the first memory bit, the source electrode of the first MOS tube is connected to a first reading line, and the drain electrode of first MOS tube is connected to a second reading line; in a first state, the first reading line is a reading word line, and the second reading line is a reading bit line; and in a second state, the second reading line is a reading word line, and the first reading line is a reading bit line. The present memory unit and the memory unit of the static random access memory can enable the exchange of the reading word line and the reading bit line.

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Inventors:
CHI, Sijie (Huawei Administration Building, Bantian Longgang Distric, Shenzhen Guangdong 9, 518129, CN)
JI, Bingwu (Huawei Administration Building, Bantian Longgang Distric, Shenzhen Guangdong 9, 518129, CN)
ZHAO, Tanfu (Huawei Administration Building, Bantian Longgang Distric, Shenzhen Guangdong 9, 518129, CN)
ZHOU, Yunming (Huawei Administration Building, Bantian Longgang Distric, Shenzhen Guangdong 9, 518129, CN)
Application Number:
CN2018/084100
Publication Date:
March 07, 2019
Filing Date:
April 23, 2018
Export Citation:
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Assignee:
HUAWEI TECHNOLOGIES CO., LTD. (Huawei Administration Building, Bantian Longgang Distric, Shenzhen Guangdong 9, 518129, CN)
International Classes:
G11C11/418
Attorney, Agent or Firm:
E-TONE INTELLECTUAL PROPERTY FIRM (Room 707, No. 3 Mansion ZiJinShuMaYuan ,Zhongguancun, Haidian District, Beijing 0, 100190, CN)
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