MEMRISTOR BASED ON A MIXED METAL OXIDE

WIPO Patent Application WO/2013/073993

A8

The present invention relates to micro- and nano-electronics devices based on non-conventional materials. Such memristor devices with stable and reproducible characteristics can be used in the production of computer systems based on the analog architecture of artificial neural networks. The device in question consists of an active layer situated between two current-conducting layers with which it is in electrical contact, said active layer being an ABOx-type oxide, where element B is titanium or zirconium or hafnium, and element A is a trivalent metal with an ion radius equal to 0.7-1.2 of the ion radius of titanium or zirconium or hafnium. If element B is titanium, then element A is selected from aluminium or scandium; if element B is zirconium or hafnium, then element A is selected from scandium or yttrium or lutecium. The technical result of the proposed invention is an increase in the stability and reproducibility of the switching voltage and of the resistance in low and high impedance states.

BATURIN ANDREY SERGEEVICH (RU)
GRIGAL IRINA PAVLOVNA (RU)
GUDKOVA SVETLANA ALEKSANDROVNA (RU)
MARKEEV ANDREY MIKHAILOVICH (RU)
CHUPRIK ANASTASIYA ALEKSANDROVNA (RU)
ALEKHIN ANATOLY PAVLOVICH АЛЕХ&I

PCT/RU2012/000899

June 19, 2014

November 02, 2012

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FED STATE BUDGETARY INSTITUTION FED AGENCY FOR LEGAL PROT OF MILITARY SPECIAL AND DUAL USE INTELLECT (RU)
MOSCOW INST OF PHYSICS AND TECHNOLOGY STATE UNIVERSITY MIPT (RU)
ALEKHINA ELLA KONSTANTINOVNA (RU)

H01L45/00; B82Y30/00; H01L21/265

PATENT & LAW FIRM "YUS" (d. 6Moscow, RU)

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