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Patent Searching and Data


Title:
MEMRISTOR AND NEURAL NETWORK USING SAME
Document Type and Number:
WIPO Patent Application WO/2019/078367
Kind Code:
A1
Abstract:
Provided is a memristor which can be manufactured at low temperature and does not include metals that could potentially dry up as a resource. The memristor 1 is provided with: a first electrode 2; a second electrode 3; and an oxide memristor layer 4 which is disposed between the first electrode 2 and the second electrode 3 and includes the elements of Ga, Sn, and oxygen. A current flows when a positive or negative voltage is applied to the first electrode 2 with respect to the second electrode 3. When the voltage of a data-set voltage value is applied, a high-resistance state transitions to a low-resistance state. When the voltage of a data-reset voltage value of the opposite polarity to that of the data-set voltage value is applied, the low-resistance state transitions to the high-resistance state.

Inventors:
KIMURA Mutsumi (1-5 Yokotani Seta Oe-ch, Otsu-shi Shiga 94, 〒5202194, JP)
SUGISAKI Sumio (1-5 Yokotani Seta Oe-ch, Otsu-shi Shiga 94, 〒5202194, JP)
MIYAMAE Yoshinori (LTD 21, Saiin Mizosaki-cho, Ukyo-k, Kyoto-shi Kyoto 85, 〒6158585, JP)
Application Number:
JP2018/039111
Publication Date:
April 25, 2019
Filing Date:
October 19, 2018
Export Citation:
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Assignee:
RYUKOKU UNIVERSITY (1-5 Yokotani, Seta Oe-cho Otsu-shi Shiga, 94, 〒5202194, JP)
ROHM CO., LTD (21 Saiin Mizosaki-cho, Ukyo-ku Kyoto-shi Kyoto, 85, 〒6158585, JP)
International Classes:
H01L21/8239; H01L27/10; H01L27/105; H01L45/00; H01L49/00
Foreign References:
JP2012043896A2012-03-01
US20160379110A12016-12-29
JP2013546064A2013-12-26
JP2018006696A2018-01-11
Attorney, Agent or Firm:
FUJIKAWA Tsuneo (KUSUMOTO PATENTS & TRADEMARKS, Daisho Bldg. 304 1-18-2, Ogay, Otsu-shi Shiga 44, 〒5202144, JP)
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