Title:
MEMS DEVICE AND METHOD FOR FABRICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2022/143968
Kind Code:
A1
Abstract:
Provided are a micro-electro-mechanical system (MEMS) device and method for fabrication thereof, comprising: providing a logic chip, comprising a substrate (10) and a complementary metal–oxide–semiconductor (CMOS) circuit (11) located on the substrate, a first structural layer (13) having a first isolation groove (120a') being formed on the logic chip; providing a bulk acoustic wave filter, comprising: a carrier substrate (100), a support layer (101) formed on the surface of the carrier substrate, a piezoelectric stack structure enclosing, with the carrier substrate and the support layer, a second cavity (110a); the bulk acoustic wave filter is bonded to the first structural layer, such that the first isolation groove is sandwiched between the logic chip and the body acoustic wave filter to form a first cavity (120a); the effective resonant region of the piezoelectric stack structure is located in the first cavity. The vertical integration of the body acoustic wave filter and the logic chip is achieved at the device fabrication stage, simplifying the manufacturing process, reducing the package size of the entire system, and significantly improving integration.
Inventors:
LI WEI (CN)
HUANG HERB HE (CN)
LUO HAILONG (CN)
HUANG HERB HE (CN)
LUO HAILONG (CN)
Application Number:
PCT/CN2021/143480
Publication Date:
July 07, 2022
Filing Date:
December 31, 2021
Export Citation:
Assignee:
NINGBO SEMICONDUCTOR INT CORPORATION SHANGHAI BRANCH (CN)
International Classes:
H03H9/10; H03H9/02; H03H9/17
Foreign References:
| US20210159873A1 | 2021-05-27 | |||
| CN110401428A | 2019-11-01 | |||
| CN107181472A | 2017-09-19 | |||
| CN107181470A | 2017-09-19 | |||
| CN112039465A | 2020-12-04 | |||
| US20060202779A1 | 2006-09-14 | |||
| CN104011888A | 2014-08-27 |
Attorney, Agent or Firm:
BEIJING SICHUANG DACHENG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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