Title:
METAL-CONTAINING COMPOUND, PROCESS FOR PRODUCING THE SAME, METAL-CONTAINING THIN FILM, AND METHOD OF FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2007/015436
Kind Code:
A1
Abstract:
A compound which has thermal stability and moderate vaporizability and is satisfactory
as a material for the CVD or ALD method; a process for producing the compound; a
thin film formed from the compound as a raw material; and a method of forming the
thin film. A compound represented by the general formula (1) is produced by reacting
a compound represented by the general formula (2) with a compound represented
by the general formula (3). The compound produced is used as a raw material to form
a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2]
(2) [Chemical formula 3] Mp(NR4R5)q
(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.;
n is 2 or 3 according to cases; R1 and R3 each represents C1-6
alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4
and R5 each represents C1-4 alkyl, etc.; X represents hydrogen,
lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases.)
Inventors:
TADA KEN-ICHI
INABA KOICHIRO
FURUKAWA TAISHI
YAMAKAWA TETSU
OSHIMA NORIAKI
INABA KOICHIRO
FURUKAWA TAISHI
YAMAKAWA TETSU
OSHIMA NORIAKI
Application Number:
PCT/JP2006/315037
Publication Date:
February 08, 2007
Filing Date:
July 28, 2006
Export Citation:
Assignee:
TOSOH CORP (JP)
SAGAMI CHEM RES (JP)
TADA KEN-ICHI
INABA KOICHIRO
FURUKAWA TAISHI
YAMAKAWA TETSU
OSHIMA NORIAKI
SAGAMI CHEM RES (JP)
TADA KEN-ICHI
INABA KOICHIRO
FURUKAWA TAISHI
YAMAKAWA TETSU
OSHIMA NORIAKI
International Classes:
C07C257/12; C07C257/14; C23C16/40; H01L21/312; C07F5/00; C07F5/06; C07F7/00; C07F7/28
Foreign References:
| US20060035462A1 | 2006-02-16 | |||
| JP2004196618A | 2004-07-15 | |||
| JP2003137551A | 2003-05-14 | |||
| US20050042372A1 | 2005-02-24 | |||
| JP2005226886A | 2005-08-25 | |||
| JP2005326883A | 2005-11-24 | |||
| JP2005326884A | 2005-11-24 | |||
| JP2006192791A | 2006-07-27 |
Other References:
CARMALT C.J. ET AL.: "Synthesis of Titanium(IV) Guanidinate Complexes and the Formation of Titanium Carbonitride via Low-Pressure Chemical Vapor Deposition", INORGANIC CHEMISTRY, vol. 44, no. 3, 2005, pages 615 - 619, XP003007845
KENNEY A.P. ET AL.: "The Insertion of Carbodiimides into Al and Ga Amido Linkages. Guanidinates and Mixed Amido Guanidinates of Aluminum and Gallium", INORGANIC CHEMISTRY, vol. 44, no. 8, 2005, pages 2926 - 2933, XP003007846
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. G29, 2005, pages 152
CHEMISTRY OF MATERIALS, vol. 14, 2002, pages 4350
JOURNAL OF MATERIALS CHEMISTRY, vol. 14, 2004, pages 3101
NAGASHIMA ET AL., ORGNOMETALLICS, vol. 19, 2000, pages 725
FORSBERG ET AL., THE JOURNAL OF ORGANIC CHEMISTRY, vol. 52, 1987, pages 1017
BRADLEY ET AL., JOURNAL OF THE CHEMICAL SOCIETY, 1960, pages 3857
POWER ET AL., POLYHEDRON, vol. 9, 1990, pages 257
See also references of EP 1921061A4
KENNEY A.P. ET AL.: "The Insertion of Carbodiimides into Al and Ga Amido Linkages. Guanidinates and Mixed Amido Guanidinates of Aluminum and Gallium", INORGANIC CHEMISTRY, vol. 44, no. 8, 2005, pages 2926 - 2933, XP003007846
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. G29, 2005, pages 152
CHEMISTRY OF MATERIALS, vol. 14, 2002, pages 4350
JOURNAL OF MATERIALS CHEMISTRY, vol. 14, 2004, pages 3101
NAGASHIMA ET AL., ORGNOMETALLICS, vol. 19, 2000, pages 725
FORSBERG ET AL., THE JOURNAL OF ORGANIC CHEMISTRY, vol. 52, 1987, pages 1017
BRADLEY ET AL., JOURNAL OF THE CHEMICAL SOCIETY, 1960, pages 3857
POWER ET AL., POLYHEDRON, vol. 9, 1990, pages 257
See also references of EP 1921061A4
Attorney, Agent or Firm:
NAITO, Teruo et al. (7-13 Nishi-Shimbashi 1-chom, Minato-ku Tokyo 03, JP)
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