Title:
METAL-INSULATOR-METAL CAPACITOR STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/035545
Kind Code:
A1
Abstract:
Disclosed are a metal-insulator-metal capacitor structure and a preparation method therefor. The metal-insulator-metal capacitor structure comprises: a substrate; a capacitor structure comprising a bottom metal layer, an interlayer dielectric layer, and a top metal layer stacked in sequence on the substrate; openings extending through the top metal layer and extending downward into the interlayer dielectric layer; recesses, formed on sidewalls of the openings, and further extending downward from the bottoms of the openings into the interlayer dielectric layer; and side members, located in the openings, and extending downward from the sidewall of the top metal layer to fill the recesses, wherein the interlayer dielectric layer and the side members are made of the same material. By means of the metal-insulator-metal capacitor structure and the preparation method therefor, the breakdown voltage of the metal-insulator-metal capacitor structure can be improved.
Inventors:
LIU XIANG (CN)
WANG JIAXI (CN)
WANG JIAXI (CN)
Application Number:
PCT/CN2022/074720
Publication Date:
March 16, 2023
Filing Date:
January 28, 2022
Export Citation:
Assignee:
GUANGZHOU CANSEMI TECH INC (CN)
International Classes:
H01L49/02
Foreign References:
| CN113517400A | 2021-10-19 | |||
| US6430028B1 | 2002-08-06 | |||
| CN105632897A | 2016-06-01 | |||
| CN103367104A | 2013-10-23 |
Attorney, Agent or Firm:
SHANGHAI SAVVY IP AGENCY CO., LTD. (CN)
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