METAL NANO-INK, PROCESS FOR PRODUCING THE METAL NANO-INK, AND DIE BONDING METHOD AND DIE BONDING APPARATUS USING THE METAL NANO-INK

WIPO Patent Application WO/2010/013588

A1

Disclosed is a metal nano-ink (100).  The metal nano-ink (100) is used in bonding an electrode in a semiconductor die to an electrode in a substrate and/or bonding the electrode in the semiconductor die to an electrode in other semiconductor die by pressure sintering.  The metal nano-ink (100) is produced by injecting oxygen as oxygen nano-bubbles (125) or oxygen bubbles (121) into an organic solvent (105) before or after mixing of metal nano-particles (101) having a surface coated with a dispersant (102) into the organic solvent (105).  Fine droplets of the metal nano-ink (100) are ejected onto an electrode in a semiconductor die and an electrode in a substrate to form bumps on the electrodes.  The semiconductor die is turned over and superimposed on the substrate in positional alignment with the substrate.  The bumps between the electrode in the semiconductor die and the electrode in the substrate are then pressed and heated to pressurize and sinter the metal nano-particles in the bumps, whereby the occurrence of voids in the pressure sintering can be suppressed.

MAEDA TORU (JP)
TANIKAWA TETSURO (JP)
TERAMOTO AKINOBU (JP)
ODA MASAAKI (JP)

PCT/JP2009/062430

February 04, 2010

July 08, 2009

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SHINKAWA KK (JP)
UNIV TOHOKU (JP)
ULVAC INC (JP)
MAEDA TORU (JP)
TANIKAWA TETSURO (JP)
TERAMOTO AKINOBU (JP)
ODA MASAAKI (JP)

H01L21/60; B22F1/102; B82Y10/00; B82Y30/00; H01B1/22; H01L25/065; H01L25/07; H01L25/18

JP2002299833A	2002-10-11
JP2004327908A	2004-11-18
JP2007177103A	2007-07-12
JP2008218474A	2008-09-18

YOSHIDA, Kenji et al. (JP)
Kenji Yoshida (JP)

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