Title:
METAL OXIDE FILM FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2016/203594
Kind Code:
A1
Abstract:
The purpose of the present invention is to obtain a metal oxide film formation method which makes it possible to produce a high-quality metal oxide film while increasing production efficiency. The film formation method according to the present invention involves: obtaining a starting material solution mist (M1) by misting a starting material solution (14) that contains aluminum, a metal element, inside a solution vessel (15); obtaining an aid agent mist (M2) by misting a reaction aid solution (24), which contains a reaction aid agent for use in forming aluminum oxide, inside a solution vessel (25) that is independent from the solution vessel (15); supplying the starting material solution mist (M1) and the aid agent mist (M2) to a nozzle (12) provided inside a reaction vessel (11) via channels (L1), (L2); and thereafter, obtaining a mixture mist (M3) by mixing the starting material solution mist (M1) and the aid agent mist (M2) inside the nozzle (12), and supplying the mixture mist (M3) onto the rear surface of a heated P-type silicon substrate (4).
More Like This:
Inventors:
HIRAMATSU TAKAHIRO (JP)
ORITA HIROYUKI (JP)
KAWAHARAMURA TOSHIYUKI (JP)
FUJITA SHIZUO (JP)
UCHIDA TAKAYUKI (JP)
ORITA HIROYUKI (JP)
KAWAHARAMURA TOSHIYUKI (JP)
FUJITA SHIZUO (JP)
UCHIDA TAKAYUKI (JP)
Application Number:
PCT/JP2015/067535
Publication Date:
December 22, 2016
Filing Date:
June 18, 2015
Export Citation:
Assignee:
TOSHIBA MITSUBISHI-ELECTRIC IND SYSTEMS CORP (JP)
UNIV KYOTO (JP)
KOCHI PREFECTURAL PUBLIC UNIV CORP (JP)
UNIV KYOTO (JP)
KOCHI PREFECTURAL PUBLIC UNIV CORP (JP)
International Classes:
C23C16/455; C23C16/40; C23C16/44; H01L21/31; H01L21/316
Domestic Patent References:
| WO2011151889A1 | 2011-12-08 |
Foreign References:
| JP2008078113A | 2008-04-03 | |||
| JP2015070248A | 2015-04-13 | |||
| JP2013028480A | 2013-02-07 |
Other References:
TOSHIYUKI KAWAHARAMURA: "Effect of 03 and Aqueous Ammonia on Crystallization of MgO Thin Film Grown by MistChemical Vapor Deposition", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 52, no. 3R, 2013, pages 035501, XP001582472
"Effects ofsource composition on electrical properties of ZnO transparent conductors by mist CVD method", THE 70TH EXTENDED ABSTRACTS; THE JAPAN SOCIETY OF APPLIED PHYSICS, vol. 1, 8 September 2009 (2009-09-08), pages 493
"Effects ofsource composition on electrical properties of ZnO transparent conductors by mist CVD method", THE 70TH EXTENDED ABSTRACTS; THE JAPAN SOCIETY OF APPLIED PHYSICS, vol. 1, 8 September 2009 (2009-09-08), pages 493
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
Hidetoshi Yoshitake (JP)
Download PDF:
Previous Patent: DEVICE FOR INSERTING FLAT TUBES INTO HEAT-EXCHANGER FINS
Next Patent: METAL OXIDE FILM FORMATION METHOD
Next Patent: METAL OXIDE FILM FORMATION METHOD