Title:
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DEVICE, AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/137341
Kind Code:
A1
Abstract:
The present invention relates to: a MOSFET device that is applicable to a semiconductor device and, particularly, is manufactured from silicon carbide; and a manufacturing method therefor. The present invention relates to a metal-oxide-semiconductor field-effect transistor device capable of comprising: a drain electrode; a substrate located on the drain electrode; an N-type drift layer located on the substrate; a first current spreading layer which is located on the drift layer and which has a first doping concentration; P-type wells located on the first current spreading layer, and spaced from each other so as to define a channel; a second current spreading layer which is located between the wells and which has a second doping concentration that is higher than the first doping concentration; a gate oxide layer located on the second current spreading layer and the wells; and a source electrode located on the gate oxide layer.
Inventors:
JANG SEUNGYUP (KR)
KIM JAEMOO (KR)
LEE HOJUNG (KR)
KIM JAEMOO (KR)
LEE HOJUNG (KR)
Application Number:
PCT/KR2020/000115
Publication Date:
July 08, 2021
Filing Date:
January 03, 2020
Export Citation:
Assignee:
LG ELECTRONICS INC (KR)
International Classes:
H01L29/78; H01L29/06
Foreign References:
| US20170345891A1 | 2017-11-30 | |||
| US20180166530A1 | 2018-06-14 | |||
| US20060192256A1 | 2006-08-31 | |||
| US20180026132A1 | 2018-01-25 | |||
| JP2016195226A | 2016-11-17 |
Attorney, Agent or Firm:
KBK&ASSOCIATES (KR)
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