Title:
METAL OXIDE SEMICONDUCTOR FILM, THIN-FILM TRANSISTOR, DISPLAY DEVICE, IMAGE SENSOR, AND X-RAY SENSOR
Document Type and Number:
WIPO Patent Application WO/2015/083501
Kind Code:
A1
Abstract:
The present invention provides a metal oxide semiconductor film containing at least indium as a metal component, and satisfying relational expression (1), given that the indium concentration in the film is DI (atoms/cm3), and the hydrogen concentration in the film is DH (atoms/cm3). The present invention further provides a device provided with the same. 0.1≤DH/DI≤1.8 (1)
Inventors:
TAKATA MASAHIRO (JP)
TANAKA ATSUSHI (JP)
SUZUKI MASAYUKI (JP)
TANAKA ATSUSHI (JP)
SUZUKI MASAYUKI (JP)
Application Number:
PCT/JP2014/079769
Publication Date:
June 11, 2015
Filing Date:
November 10, 2014
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L29/786
Foreign References:
| JP2014057052A | 2014-03-27 | |||
| JP2012104809A | 2012-05-31 | |||
| JP2011129897A | 2011-06-30 | |||
| JP2013093612A | 2013-05-16 |
Attorney, Agent or Firm:
NAKAJIMA, Jun et al. (JP)
Nakajima 淳 (JP)
Nakajima 淳 (JP)
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