METAL OXIDE SEMICONDUCTOR GAS SENSOR

WIPO Patent Application WO/2003/019168

A1

A metal oxide semiconductor gas sensor and a method of manufacturing the gas sensor, the gas sensor comprising a guided plasma thermal spraying device (20) formed of a depressurizing tank (21) having an electrode (15) formed on a substrate (10) and incorporating an insulation board (22) for placing the substrate thereon and a plasma torch (24) connected to the depressurizing tank and having a powder leading probe (26) and a high frequency coil (25), the method comprising the steps of, by using the guided plasma thermal spraying device (20), placing the substrate on the insulation board, setting a clearance between the substrate side tip of the powder leading probe and the substrate to 1000 mm or shorter, depressurizing the depressurizing tank, supplying metal oxide powder from the powder leading probe while generating high frequency guided plasma from the high frequency coil, and depositing, on the surface of the substrate, the metal oxide formed of a large grain part with large gain sizes and a large number of small grain parts formed on the peripheral surface of the large grain part.

KATSUBE TERUAKI (JP)
ONOUE KOUSEI (JP)

PCT/JP2002/006808

March 06, 2003

July 04, 2002

Click for automatic bibliography generation  

UCHIYA THERMOSTAT (JP)
KATSUBE TERUAKI (JP)
ONOUE KOUSEI (JP)

G01N27/12; (IPC1-7): G01N27/12

WO2001031324A1

2001-05-03

JPH055713A	1993-01-14
JPS59119253A	1984-07-10
JPH06288953A	1994-10-18
JPH06160324A	1994-06-07
JPH08109463A	1996-04-30

Osuga, Yoshiyuki (Nibancho Bldg. 8-20, Nibanch, Chiyoda-ku Tokyo, JP)

View/Download PDF      PDF Help

Previous Patent: REGULARIZATION MODEL FOR ELECTRICAL RESISTANCE MAPPING

Next Patent: SEMICONDUCTOR GAS SENSOR FOR GAS CHROMATOGRAPH