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Title:
METAL PURIFICATION METHOD, METAL, SILICON PURIFICATION METHOD, SILICON, CRYSTALLINE SILICON MATERIAL, AND SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2013/088784
Kind Code:
A1
Abstract:
The problem addressed by the present invention is to refine a metal to a high purity in order to improve quality. This metal purification method is provided with: a melting step in which a metal containing impurities is melted; an immersion step in which a support (3) is immersed in the molten metal (1); and a precipitation step in which the support (3) immersed in the molten metal (1) to induce the solidification and segregation of the molten metal (1), and thereby precipitate purified metal (4) having few impurities onto the surface of the support (3). Further provided are: a drawing-up step in which the support (3) is drawn up out of the molten metal (1); and an elimination step in which liquid droplets (5) formed by the solidification of the molten metal (1) adhered to the outer surface of the purified metal (4) in the drawing-up step are eliminated.

Inventors:
OISHI RYUICHI
NAGATA YOSHIHIKO
Application Number:
PCT/JP2012/070668
Publication Date:
June 20, 2013
Filing Date:
August 14, 2012
Export Citation:
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Assignee:
SHARP KK (JP)
OISHI RYUICHI
NAGATA YOSHIHIKO
International Classes:
C01B33/037; C22B9/02; H01L31/04
Foreign References:
JP2006027940A2006-02-02
JP2010173911A2010-08-12
JP2009113997A2009-05-28
JP2007314389A2007-12-06
JPH07206420A1995-08-08
JPH10265214A1998-10-06
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
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Claims: