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Patent Searching and Data


Title:
METAL SILICIDE, METAL SILICIDE MANUFACTURING METHOD, ALLOY MATERIAL, ALLOY MATERIAL MANUFACTURING METHOD, HEATING ELEMENT, AND ELECTRIC RESISTANCE BODY
Document Type and Number:
WIPO Patent Application WO/2023/195205
Kind Code:
A1
Abstract:
A metal silicide according to an embodiment of the present invention comprises an element M, said metal silicide containing 0.001-10 mass% of an element X, wherein the element X is one or more elements selected from the group consisting of Sn, Ag, Au, Bi, Pb, and Cu, and the element M is Mo or W.

Inventors:
MIKI TAKAHIRO (JP)
GAMUTAN JONAH LONGAQUIT (JP)
Application Number:
PCT/JP2022/048247
Publication Date:
October 12, 2023
Filing Date:
December 27, 2022
Export Citation:
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Assignee:
UNIV TOHOKU (JP)
International Classes:
C04B35/58; C01B33/06; C22C27/04; C23C10/22
Foreign References:
JPH1017977A1998-01-20
JP2003055761A2003-02-26
JPS62153108A1987-07-08
JPH08274380A1996-10-18
JP2009046381A2009-03-05
Other References:
ZHANG YINGYI; QIE JUNMAO; CUI KUNKUN; FU TAO; FAN XUELIAN; WANG JIE; ZHANG XU: "Effect of hot dip silicon-plating temperature on microstructure characteristics of silicide coating on tungsten substrate", CERAMICS INTERNATIONAL, ELSEVIER, AMSTERDAM., NL, vol. 46, no. 4, 28 October 2019 (2019-10-28), NL , pages 5223 - 5228, XP086007123, ISSN: 0272-8842, DOI: 10.1016/j.ceramint.2019.10.270
Attorney, Agent or Firm:
TAZAKI Akira et al. (JP)
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