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Title:
METALLIZATION STRUCTURES FOR MICROELECTRONIC APPLICATIONS AND PROCESS FOR FORMING THE STRUCTURES
Document Type and Number:
WIPO Patent Application WO/2000/005747
Kind Code:
A2
Abstract:
A metallized structure (20) for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, and a low-Me concentration, copper-Me alloy layer (40) disposed exterior to the ultra-thin film bonding layer. The Me is a metal other than copper and, preferably, is zinc. The concentration of the Me is less than about 5 atomic percent, preferably less than about 2 atomic percent, and even more preferably, less than about 1 atomic percent. In a preferred embodiment of the metallized structure, the dielectric layer, ultra-thin film bonding layer and the copper-Me alloy layer are all disposed immediately adjacent one another. If desired, a primary conductor (43), such as a film of copper, may be formed exterior to the foregoing layer sequence. The present invention also contemplates methods for forming the foregoing structure as well as electroplating baths that may be used to deposit the copper-Me alloy layer.

Inventors:
KRISHNAMOORTHY AHILA (US)
DUQUETTE DAVID J (US)
MURARKA SHYAM P (US)
Application Number:
PCT/US1999/014939
Publication Date:
February 03, 2000
Filing Date:
June 30, 1999
Export Citation:
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Assignee:
SEMITOOL INC (US)
KRISHNAMOORTHY AHILA (US)
DUQUETTE DAVID J (US)
MURARKA SHYAM P (US)
International Classes:
B32B15/01; B32B7/02; B32B15/04; C25D3/58; C25D5/18; C25D7/12; H01G4/33; H01L21/288; H01L21/3205; H01L21/768; H01L23/52; H01L23/532; (IPC1-7): H01L/
Foreign References:
US5151168A1992-09-29
US5308796A1994-05-03
US5789320A1998-08-04
US4235648A1980-11-25
US4181760A1980-01-01
Other References:
See also references of EP 1112125A2
Attorney, Agent or Firm:
Polit, Robert B. (Milnamow & Katz Ltd. Suite 4700 Two Prudential Plaza 180 North Stetson Avenue Chicago, IL, US)
Download PDF:
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Claims:
WHAT IS CLAIMED IS :
1. A metallized structure for use in a microelectronic circuit, the metallized structure comprising : a dielectric layer ; an ultrathin film bonding layer disposed exterior to the dielectric layer ; and a lowMe concentration, copperMe alloy layer disposed exterior to the ultrathin film bonding layer.
2. A metallized structure as set forth in claim 1 wherein the dielectric layer is formed from a lowK dielectric material.
3. A metallized structure as set forth in claim 1 wherein the dielectric layer is formed from a highK dielectric material.
4. A metallized structure as set forth in claim 1 wherein the Me content of the copperMe alloy layer is less than or equal to about 5 atomic percent.
5. A metallized structure as set forth in claim 1 wherein the zinc content of the copperMe alloy layer is less than or equal to about 2 atomic percent.
6. A metallized structure as set forth in claim 1 wherein the zinc content of the copperMe alloy layer is less than or equal to about 1 atomic percent.
7. A metallized structure as set forth in claim 1 wherein the ultrathin bonding layer has a thickness between about 1020 angstroms.
8. A metallized structure as set forth in claim 7 wherein the ultrathin bonding layer has a thickness of less than about 15 angstroms.
9. A metallized structure as set forth in claim 1 wherein the ultrathin bonding layer is comprised of a metal.
10. A metallized structure as set forth in claim 1 wherein the ultrathin bonding layer is comprised of a metal alloy.
11. A metallized structure for use in a microelectronic circuit, the metallized structure comprising : a dielectric layer ; an ultrathin film bonding layer disposed exterior to the dielectric layer ; and a lowzinc concentration, copperzinc alloy layer disposed exterior to the ultrathin film bonding layer.
12. A metallized structure as set forth in claim 11 and further comprising a primary copper conductor disposed exterior to the lowzinc concentration, copperzinc alloy layer.
13. A metallized structure as set forth in claim 11 wherein the dielectric layer is formed from a lowK dielectric material.
14. A metallized structure as set forth in claim 11 wherein the dielectric layer is formed from a highK dielectric material.
15. A metallized structure as set forth in claim 11 wherein the zinc content of the copperzinc alloy layer is less than or equal to about 5 atomic percent.
16. A metallized structure as set forth in claim 11 wherein the zinc content of the copperzinc alloy layer is less than or equal to about 2 atomic percent.
17. A metallized structure as set forth in claim 11 wherein the zinc content of the copperzinc alloy layer is less than or equal to about 1 atomic percent.
18. A metallized structure as set forth in claim 11 wherein the ultrathin bonding layer has a thickness between about 1020 angstroms.
19. A metallized structure as set forth in claim 18 wherein the ultrathin bonding layer has a thickness of less than about 15 angstroms.
20. A metallized structure as set forth in claim 11 wherein the ultrathin bonding layer is comprised of a metal.
21. A metallized structure as set forth in claim 11 wherein the ultrathin bonding layer is comprised of a metal alloy.
22. A metallized structure for use in a microelectronic circuit, the metallized structure comprising : a dielectric layer ; an ultrathin film bonding layer disposed adjacent to the dielectric layer ; and a lowzinc concentration, copperzinc alloy layer disposed adjacent to the ultrathin film bonding layer.
23. A metallized structure as set forth in claim 22 and further comprising a primary copper conductor layer adjacent the lowzinc concentration, copper zinc alloy layer.
24. A metallized structure as set forth in claim 22 wherein the dielectric layer is formed from a lowK dielectric material.
25. A metallized structure as set forth in claim 22 wherein the dielectric layer is formed from a highK dielectric material.
26. A metallized structure as set forth in claim 22 wherein the zinc content of the copperzinc alloy layer is less than or equal to about 5 atomic percent.
27. A metallized structure as set forth in claim 22 wherein the zinc content of the copperzinc alloy layer is less than or equal to about 2 atomic percent.
28. A metallized structure as set forth in claim 22 wherein the zinc content of the copperzinc alloy layer is less than or equal to about 1 atomic percent.
29. A metallized structure as set forth in claim 22 wherein the ultrathin bonding layer has a thickness between about 1020 angstroms.
30. A metallized structure as set forth in claim 29 wherein the ultrathin bonding layer has a thickness of less than about 15 angstroms.
31. A metallized structure as set forth in claim 22 wherein the ultrathin bonding layer is formed from a material with a high magnitude freeenergy of formation for compounds that will form at the dielectricbonding layer interface.
32. A metallized structure as set forth in claim 22 wherein the ultrathin bonding layer is comprised of a metal.
33. A metallized structure as set forth in claim 22 wherein the ultrathin bonding layer is comprised of a metal alloy.
34. A method for forming a metallized structure on a microelectronic workpiece comprising the steps of : depositing a dielectric layer on the microelectronic workpiece ; depositing an ultrathin bonding layer exterior to the dielectric layer ; depositing a low Me concentration, copperMe alloy layer exterior to the ultrathin bonding layer, where Me is a metal other than copper.
35. A method for forming a metallized structure as set forth in claim 34 wherein the ultrathin bonding layer is disposed immediately adjacent the dielectric layer and the copperMe alloy layer is disposed immediately adjacent the ultrathin bonding layer.
36. A method for forming a metallized structure as set forth in claim 35 wherein the concentration of Me is less than about 5 atomic percent.
37. A method for forming a metallized structure as set forth in claim 35 wherein the concentration of Me is less than about 2 atomic percent.
38. A method for forming a metallized structure as set forth in claim 35 wherein the concentration of Me is less than about 1 atomic percent.
39. A method for forming a metallized structure as set forth in claim 35 wherein Me is zinc.
40. A method for forming a metallized structure as set forth in claim 36 wherein Me is zinc.
41. A method for forming a metallized structure in set forth in claim 37 wherein Me is zinc.
42. A method for forming a metallized structure in set forth in claim 38 wherein Me is zinc.
43. A method for forming a metallized structure as set forth in claim 34 wherein the copperMe alloy layer is deposited using an electrochemical deposition process.
44. A method for forming a metallized structure as set forth in claim 43 wherein the electrochemical deposition process uses a constant potential waveform.
45. A method for forming a metallized structure as set forth in claim 44 wherein the constant potential waveform comprises a forward pulsed waveform.
46. A method for forming a metallized structure as set forth in claim 35 wherein the copperMe alloy layer is deposited using an electrochemical deposition process.
47. A method for forming a metallized structure as set forth in claim 41 wherein the copperMe alloy layer is deposited using an electrochemical deposition process.
48. An electroplating bath for depositing a lowMe concentration, copperMe alloy layer on the surface of a microelectronic workpiece, where Me is a metal other than copper, the bath comprising : MeS04 as a source of the metal Me ; Culs04 as a source of copper ; (NH4) 2SO4 as a complexing agent ; and NH40H as a pH adjuster.
49. An electroplating bath as set forth in claim 48 wherein the MeS04 is Zens04.
50. An electroplating bath as set forth in claim 48 wherein Me in the MeS04 is selected from the group consisting of the zinc, aluminum, boron, magnesium, and cesium.
51. An electroplating bath as set forth in claim 48 and further comprising an addition agent that serves as both a wetting agent and a complexing agent.
52. An electroplating bath as set forth in claim 51 wherein the addition agent is a chemical selected from the group consisting of ED and EDTA.
53. An electroplating bath for depositing a lowMe concentration, copperMe alloy layer on the surface of a microelectronic workpiece, where Me is a metal other than copper, the bath comprising : MeS04 as a source of the metal Me, the MeS04 being in the electroplating bath at a concentration between about 1040 g/1 ; CuS04 as a source of copper, the Culs04 being in the electroplating bath at a concentration between about 520 g/l; (NH4) 2SO4 as a complexing agent, the (NH4) 2SO4 being in the electroplating bath at a concentration between about 2040 g/1 ; and NH40H as a pH adjuster, the (NH4) 2SO4 being in the electroplating bath at a concentration between about 50100 g/l.
54. An electroplating bath as set forth in claim 53 wherein the MeS04 is ZnS04.
55. An electroplating bath as set forth in claim 53 wherein Me in the MeSOa is selected from the group consisting of the zinc, aluminum, boron, magnesium, and cesium.
56. An electroplating bath as set forth in claim 53 and further comprising an addition agent that serves as both a wetting agent and a complexing agent.
57. An electroplating bath as set forth in claim 56 wherein the addition agent is a chemical selected from the group consisting of ED and EDTA.
58. An electroplating bath as set forth in claim 57 wherein the addition agent is present in the electroplating bath at a concentration that is between about 0. 1 lml/l.
59. An electroplating bath as set forth in claim 53 wherein the pH of the electroplating bath is about 11.
Description:
INTERNATIONAL SEARCH REPORT International apphcation No. PCT/US99/14939 C (Continuation). DOCUMENTS CONSIDERED TO BE RELEVANT Category'F Citation of document, with indication, where appropriate, of the relevant passages Relevant to claim No. X U. S. 5,789,320 A (Andricacos et al.) 04 August 1998 4 to 16, 18- (04.08.1998) Low Me Conc. Copper alloy Col. 3 lines 404-5. 21, 23-33, 44-47, 49-59. X U. S. 4, 235,648 A (Richardson) 25 November 1980 4 to 16,18-21, (25.11.1980). Entire document. 23-33 A U. S. 4,181,760 (Feldstein) 01 January 1980 (01.01.1980) Entire 34-43. document INTERNATIONAL SEARCH REPORT International application No. PCT/US99/14939 Bcx I Observations where certain claims were found unsearchai) te (Continuation of item I of first sheet) This mternational report has not been established in respect of certain claims under Anicle 17 (2) (a) tor the followin « reasons : 1. ! Claims Nos. : because they relate to subject matter not required to he searched by this Authority, namely : Claims Nos. : because they relate to parts of the international application that do not comply with the prescribed requirements to such an extent that no meaningful international search can be carried out, specifically : 3. ! z1 Claims Nos.: because they are dependent claims and are not drafted in accordance with the second and third sentences of Rule 6.4 (a). Box I ! Observations where unity of invention is lacking (Continuation of item 2 of first sheet) This International Searching Authority found multiple inventions in this international npplication, as follows : See attached PCT Telephone Memorandum tor Lack of Unity of Invention (form US PTO/299) 1.21 As ah required additional search fees were timety paid by the appticant. this internationat search report covers an searchable u claims. 2. j As all searchable claims could be searched without effort justifying an atlditional fee, this Authority did not invite payment of any additional fee. 3. As only some of the required additional search fees were timely paid hy the aplicant, this international scarch rexrt covers only those claims for which fees were paid, specifically claims Nos.: 4. 3 No required additional search fees were time) y paid by the applicant. Consequently, this international search report is restricted to the invention first mentioned in the claims : it is covered by claims Nos. : Remark on Protest The additionat search fees were accompanied by (he apphcant's protest. X No protest accompanied the payment of additional search fees. INTERNATIONAL SEARCH REPORT International application No. PCT/US99/14939 B. FIELDS SEARCHED Minimumdocumentation searched Classification System : U. S. 438/687.625.637.688,685.668 C23 F 5110, B32 B 15/06. 15/18, 19/00, 9/00,



 
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