Title:
METHOD OF ALTERING THE PROPERTIES OF A THIN FILM AND SUBSTRATE IMPLEMENTING SAID METHOD
Document Type and Number:
WIPO Patent Application WO2003099707
Kind Code:
A3
Abstract:
The invention relates to a method of altering the properties of a thin film (1) which is disposed on the surface of a support (2), thereby forming a substrate (3) which is used in the field of micro- and nano-electronics and micro- and nano-technology. The inventive method consists in producing at least one thin film (1) on a nanostructured support having a large specific surface area (2) and treating said nanostructured support (2) in order to generate internal stresses therein. In this way, a deformation is produced in said support at least in the plane of the thin film in such a way as to ensure a corresponding deformation in the thin film, in order to alter the properties thereof.
Inventors:
MARTY OLIVIER (FR)
LYSENKO VOLODYMYR (FR)
LYSENKO VOLODYMYR (FR)
Application Number:
PCT/FR2003/001423
Publication Date:
April 08, 2004
Filing Date:
May 07, 2003
Export Citation:
Assignee:
UNIV CLAUDE BERNARD LYON (FR)
MARTY OLIVIER (FR)
LYSENKO VOLODYMYR (FR)
MARTY OLIVIER (FR)
LYSENKO VOLODYMYR (FR)
International Classes:
B05D3/00; B32B15/00; B81C1/00; B82B3/00; C30B25/02; H01L21/20; H01L21/205; H01L39/24; H01L41/22; H01L41/332; (IPC1-7): H01L21/20; B81C1/00
Foreign References:
| FR2689912A1 | 1993-10-15 |
Other References:
ROMANOV S I ET AL: "GESI FILMS WITH REDUCED DISLOCATION DENSITY GROWN BY MOLECULAR-BEAMEPITAXY ON COMPLIANT SUBSTRATES BASED ON POROUS SILICON", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 75, no. 26, 27 December 1999 (1999-12-27), pages 4118 - 4120, XP000902592, ISSN: 0003-6951
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 06 22 September 2000 (2000-09-22)
SANCHEZ J J ET AL: "Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (111)B GaAs grown by MBE", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 192, no. 3-4, 1 September 1998 (1998-09-01), pages 363 - 371, XP004142190, ISSN: 0022-0248
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 06 22 September 2000 (2000-09-22)
SANCHEZ J J ET AL: "Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (111)B GaAs grown by MBE", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 192, no. 3-4, 1 September 1998 (1998-09-01), pages 363 - 371, XP004142190, ISSN: 0022-0248
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