METHOD FOR ANALYZING SILICON SUBSTRATE

Title:

METHOD FOR ANALYZING SILICON SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2019/198651

Kind Code:

A1

Abstract:

The present invention provides a method for analyzing a silicon substrate that enables highly accurate analysis, by ICP-MS, of impurities such as trace metals in a silicon substrate on which a nitride film of large film thickness has been formed. The present invention is a method of analysis using a silicon substrate analysis device provided with a loading port, a substrate transport robot, an aligner, a drying chamber, a vapor phase decomposition chamber, an analysis scan port including an analysis stage and a substrate analysis nozzle, an analytical solution collecting means, and an analysis means for analysis with inductively coupled plasma, wherein the method of analysis is characterized by: sweeping over the surface of a silicon substrate on which a nitride film has been formed with a recovery solution of a mixed solution of hydrofluoric acid and hydrogen peroxide from the substrate analysis nozzle and recovering same, thereafter discharging the recovery solution onto the silicon substrate surface and drying by heating, discharging a strong acid solution or a strong alkaline solution and drying by heating, sweeping the silicon substrate surface with an analytical solution and recovering same, and analyzing the analytical solution by ICP-MS.

Inventors:

WU JIAHONG (JP)
KAWABATA KATSUHIKO (JP)
IKEUCHI MITSUMASA (JP)
LEE SUNGJAE (JP)

Application Number:

PCT/JP2019/015243

Publication Date:

October 17, 2019

Filing Date:

April 08, 2019

Export Citation:

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Assignee:

TOSHIBA MEMORY CORP (JP)
IAS INC (JP)

International Classes:

G01N27/62

Foreign References:

JP6108367B1	2017-04-05
JP2016057230A	2016-04-21
JP2002372525A	2002-12-26
JPH11281542A	1999-10-15
JP2013257272A	2013-12-26
JPS618367B2	1986-03-13

Other References: