Title:
METHOD AND APPARATUS FOR ANISOTROPIC ETCHING
Document Type and Number:
WIPO Patent Application WO2001008207
Kind Code:
A8
Abstract:
A method is provided for treating a substrate material or a film present on the material surface. A first treatment step comprises plasma etching wherein ions are accelerated at voltages exceeding 50eV onto the material surface being etched to disrupt the surface bonding, with or without additional radiation. A second step of vapour etching the damaged surface is then performed. These two steps are repeated cyclically until a required etch depth is attained.
Inventors:
BHARDWAJ JYOTI KIRON (GB)
Application Number:
PCT/GB2000/002786
Publication Date:
July 12, 2001
Filing Date:
July 24, 2000
Export Citation:
Assignee:
SURFACE TECHNOLOGY SYSTEMS PLC (GB)
BHARDWAJ JYOTI KIRON (GB)
BHARDWAJ JYOTI KIRON (GB)
International Classes:
H01L21/311; (IPC1-7): H01L21/311
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