Title:
METHOD AND APPARATUS FOR BURYING RUTHENIUM INTO RECESSED PART
Document Type and Number:
WIPO Patent Application WO/2023/153275
Kind Code:
A1
Abstract:
The present invention provides a technology for burying ruthenium into a recessed part, while suppressing the formation of a void. According to the present invention, when ruthenium is buried into a recessed part that is formed in an insulating film on a substrate, a ruthenium starting material is supplied to the substrate so that a first ruthenium film is formed in such a manner that ruthenium is buried into the recessed part, and subsequently, the formation of the first ruthenium film is stopped by the recessed part. After that, an ozone gas is supplied to the substrate so that the first ruthenium film is etched until the side wall of the recessed part is exposed, while leaving the buried ruthenium to remain on the bottom side within the recessed part. Subsequently, a ruthenium starting material is supplied to the substrate so that a second ruthenium film is formed in such a manner that the recessed part is filled with ruthenium.
Inventors:
ARAKI MASATO (JP)
ISHIZAKA TADAHIRO (JP)
ISHIZAKA TADAHIRO (JP)
Application Number:
PCT/JP2023/003057
Publication Date:
August 17, 2023
Filing Date:
January 31, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/285; C23C16/02; C23C16/06; H01L21/3205; H01L21/768; H01L23/532
Foreign References:
| JP2022504574A | 2022-01-13 | |||
| US20090263967A1 | 2009-10-22 | |||
| JP2021147692A | 2021-09-27 | |||
| JP2005187880A | 2005-07-14 |
Attorney, Agent or Firm:
YAYOY PATENT OFFICE (JP)
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