Title:
METHOD AND APPARATUS FOR ENDPOINT DETECTION USING PARTIAL LEAST SQUARES
Document Type and Number:
WIPO Patent Application WO2002077589
Kind Code:
A3
Abstract:
An apparatus and method for detection of a feature etch completion within an etching reactor. The method includes determining a correlation matrix by recording first measured data regarding a first etch process over successive time intervals to form a first recorded data matrix (110), assembling a first endpoint signal matrix using target endpoint data for a specific etch process, performing a partial least squares analysis (130) on the recorded data matrix and the first endpoint signal matrix to refine the recorded data matrix, and computing a correlation matrix (180) based upon the refined recorded data matrix and the first endpoint signal matrix. The method further includes performing a second etch process to form a second recorded data matrix. The correlation matrix and the second recorded data matrix are analyzed to determine whether an endpoint of the second etch process has been achieved.
More Like This:
Inventors:
YUE HONGYU (US)
FATKE DAVID (US)
FATKE DAVID (US)
Application Number:
PCT/US2002/009073
Publication Date:
November 14, 2002
Filing Date:
March 25, 2002
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
YUE HONGYU (US)
FATKE DAVID (US)
YUE HONGYU (US)
FATKE DAVID (US)
International Classes:
H01L21/3065; H01J37/32; H01L21/66; (IPC1-7): G01J3/457
Foreign References:
| US6046796A | 2000-04-04 | |||
| JPS63200533A | 1988-08-18 | |||
| JPS6393115A | 1988-04-23 | |||
| JPH03181129A | 1991-08-07 | |||
| US6153115A | 2000-11-28 |
Other References:
TAN, L. ET AL.: "Steady-state regression analysis and optimization of multivariable plasma etching system", IECON PROCEEDINGS, vol. 3, September 1994 (1994-09-01), pages 1986 - 1991, XP000526839
WANGMANEERAT, B. ET AL.: "Plasma etching diagnostics for silicon nitride thin films using emission spectroscopy and multivariate calibration", PROC. - ELECTROCHEM. SOC., vol. 92-18, 1992, pages 115 - 126, XP002953642
LEE, S.F. ET AL.: "Prediction of wafer state after plasma processing using real-time tool data", IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, vol. 8, no. 3, August 1995 (1995-08-01), pages 252 - 261, XP002953643
DOSE, V.: "Multivariate analysis of PECVD data", APPL. PHYS. A, vol. A56, 1993, pages 471 - 477, XP002953644
WANGMANEERAT, B. ET AL.: "Plasma etching diagnostics for silicon nitride thin films using emission spectroscopy and multivariate calibration", PROC. - ELECTROCHEM. SOC., vol. 92-18, 1992, pages 115 - 126, XP002953642
LEE, S.F. ET AL.: "Prediction of wafer state after plasma processing using real-time tool data", IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, vol. 8, no. 3, August 1995 (1995-08-01), pages 252 - 261, XP002953643
DOSE, V.: "Multivariate analysis of PECVD data", APPL. PHYS. A, vol. A56, 1993, pages 471 - 477, XP002953644
Download PDF: