Title:
METHOD AND APPARATUS FOR ETCHING SILICON-CONTAINING FILM
Document Type and Number:
WIPO Patent Application WO/2010/035522
Kind Code:
A1
Abstract:
Disclosed are a method and an apparatus for etching a silicon-containing film such as a silicon film or a silicon oxide film at a high rate without leaving residues, while suppressing etching of a base film. A silicon-containing film (93) on a base film (92) is etched by bringing a process gas, which contains a fluorine-based reaction component and an oxidizing reaction component, into contact with an object (90) to be processed. The flow rate of the process gas on the object (90) to be processed is changed by a flow rate-regulating means (60) in accordance with the progress of the etching. Preferably, the gas flow rate is changed by regulating the amount of the process gas flow. More preferably, the amount of the process gas flow is regulated by mixing a flow rate-regulating gas into a process gas supply system (10) or by stopping the mixing.
Inventors:
KUNUGI, Shunsuke (2-2, Kamichoshi-cho, Kamitoba, Minami-ku, Kyoto-sh, Kyoto 05, 60181, JP)
功刀 俊介 (〒05 京都府京都市南区上鳥羽上調子町２－２ 積水化学工業株式会社内 Kyoto, 60181, JP)
功刀 俊介 (〒05 京都府京都市南区上鳥羽上調子町２－２ 積水化学工業株式会社内 Kyoto, 60181, JP)
Application Number:
JP2009/054089
Publication Date:
April 01, 2010
Filing Date:
March 04, 2009
Export Citation:
Assignee:
SEKISUI CHEMICAL CO., LTD. (4-4 Nishitemma 2-chome, Kita-ku Osaka-sh, Osaka 65, 53085, JP)
積水化学工業株式会社 (〒65 大阪府大阪市北区西天満２丁目４番４号 Osaka, 53085, JP)
KUNUGI, Shunsuke (2-2, Kamichoshi-cho, Kamitoba, Minami-ku, Kyoto-sh, Kyoto 05, 60181, JP)
積水化学工業株式会社 (〒65 大阪府大阪市北区西天満２丁目４番４号 Osaka, 53085, JP)
KUNUGI, Shunsuke (2-2, Kamichoshi-cho, Kamitoba, Minami-ku, Kyoto-sh, Kyoto 05, 60181, JP)
International Classes:
H01L21/3065; H01L21/02
Attorney, Agent or Firm:
WATANABE, Noboru et al. (Kudanminami Green Bldg. 3F, 7-7 Kudanminami 3-chome, Chiyoda-k, Tokyo 74, 10200, JP)