Title:
METHOD AND APPARATUS FOR MONITORING POLISHING STATE, POLISHING DEVICE, PROCESS WAFER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2001/048801
Kind Code:
A1
Abstract:
Before polishing a wafer (4), a reflector of the same shape and size as the wafer (4) is held on a polishing head (2) in place of the wafer (4). A polishing agent (5) is applied between the reflector and a window (15) in a polishing pad (13), and the reflector is pressed against the polishing pad (13) with the same pressure as in polishing the wafer (4). In this condition, the reflector is irradiated with probe light emitted from a light source (31) through the window (15), and a sensor (43) produces output indicative of the spectrum line intensity of the reflection as a reference spectrum. During actual polishing, the sensor (43) produces output indicative of the spectrum line intensity of the reflection from the wafer (4) sequentially as measured spectra to determine the ratio of the intensity of the measurement spectrum to that of the reference spectrum, and based on the ratio the polishing state is monitored.
Inventors:
ISHIKAWA AKIRA (JP)
USHIO YOSHIJIRO (JP)
USHIO YOSHIJIRO (JP)
Application Number:
PCT/JP2000/008993
Publication Date:
July 05, 2001
Filing Date:
December 19, 2000
Export Citation:
Assignee:
NIPPON KOGAKU KK (JP)
ISHIKAWA AKIRA (JP)
USHIO YOSHIJIRO (JP)
ISHIKAWA AKIRA (JP)
USHIO YOSHIJIRO (JP)
International Classes:
B24B37/013; B24B49/12; G01B11/06; H01L21/00; H01L21/304; H01L21/306; (IPC1-7): H01L21/304; B24B37/04; G01B11/00
Foreign References:
| JPH1133901A | 1999-02-09 | |||
| JPS6443707A | 1989-02-16 | |||
| JPH09210636A | 1997-08-12 | |||
| US5672091A | 1997-09-30 | |||
| JPH1019537A | 1998-01-23 | |||
| JPH10202520A | 1998-08-04 | |||
| JP2000326221A | 2000-11-28 |
Other References:
See also references of EP 1176631A4
Attorney, Agent or Firm:
Hosoe, Toshiaki (Nishikanagawa Kanagawa-ku Yokohama-shi, Kanagawa, JP)
Download PDF: